KM44C258C Search Results

km44c258

Abstract: KM44C258cz
Contextual Info: KM44C258C CMOS DRAM 2 62 ,14 4 x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • TTbHlMS DD1SSSL 3bT KM44C258C SHGK CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de­

Contextual Info: KM44C258C CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 2 6 2 ,1 4 4 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: KM44C258C CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C258C is a CMOS high speed 2 6 2 ,1 4 4 x 4 D ynam ic Random A cce ss Memory. Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s

LC324256-10

Abstract: lh64256 HY534256-60 LC324256-12 514258 HY534256-10 km44c256c Z80A HY51C4258L-12 HY51C4258L-85
Contextual Info: - 2121M CMOS 7s m & î± CO A Dynamic -f* y / RAM 2 6 2 1 4 4 x 4 n ft TRAC isax (ns) TRCY min (ns) TCAll min (ns) TAH min (ns) TP min (ns) T#CY (ns) T M min (ns) TRWC min (ns) V D D or V C C (V) 2 IDD max (mA) 0 PIN K f) m I DD STANDBY ( I SB/ I SB2) (mA)

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

KM41C4000BJ

Abstract: 256k x 4 KM44C256CJ km44c256cp
Contextual Info: MEMORY ICs FUNCTION GUIDE Dynam ic RAM Continued -Capacity 1 M b it 4 M b it - Part Number Organization KM41C1002CVR KM41C1002CT 1M x1 1M x 1 KM41C1002CTR 1M x1 Speed(ns) Technology Features Packages Remark ' 60/70/80 CMOS Static Column

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM44C258

Abstract: KM44C1002BV
Contextual Info: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC