KM416S8030 Search Results

KM416S8030

Contextual Info: Preliminary CMOS SDRAM KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS

KM416S8030

Contextual Info: Preliminary CMOS SDRAM KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS

KM416S8030B

Contextual Info: KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History

Contextual Info: KM416S8030A CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 May. 1999 KM416S8030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999

a9333

Contextual Info: Preliminary KM416S8030 CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation The KM416S8030 is 134,217,728 bits synchronous high data

KM416S8030BN

Abstract: KM416S8030B
Contextual Info: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP

Contextual Info: Preliminary CMOS SDRAM KM416S8030 2M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 416S8030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 2,097,152 w ords by 16 • LVTTL com patible with m ultiplexed address

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: KMM366S924ATS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KMM366S924TS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 PC100 Unbuffered DIMM KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

ICC2N

Contextual Info: KMM464S1724AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KMM464S924AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1724T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. REV. 2 April '98 aJECTRONCS Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM

Contextual Info: KMM366S924BTS PC100 Unbuffered DIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

MS-24L244

Abstract: samsung u2 cable 3528 SMD Samsung LED smd diode U12 in4148 smd diode LCBHBT161M X4 DIODE SMD resistor 2012 2012 SMD resistor SMD resistor 334
Contextual Info: MODEL : S3C2400X 220Mhz No 1 2 3 4 5 Reference CN1 CN2 CON1 CON2 CON3 6 CON4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 CON5, CON6 CON7 CON8 C1, C2, C3, C4, C5, C6, C7, C8, C17, C18, C19, C20, C21, C22, C23, C24, C25, C26, C37, C38,

Contextual Info: Preliminary KMM466S924T_ 144pin SDRAM SODIMM KMM466S924T SDRAM SODIMM 8M x64 SDRAM SO DIM M based on 8M x16, 4B anks, 4K Refresh, 3.3V S ynchronous D R AM s w ith SPD G ENER AL D ESCRIPTION FEATURE The Samsung KM M466S924T is a 8M bit x 64 Synchronous

32 inch TV samsung lcd Schematic

Abstract: lcd tv inverter board schematic lcd inverter board schematic lcd inverter board schematic samsung tv samsung lcd tv power supply schematic 32 inch samsung LCD TV SCHEMATIC schematic lcd inverter samsung schematic Samsung TV led backlight samsung lcd inverter schematic TC59SM716FT80
Contextual Info: Intel StrongARM* SA-1110 Development Board Specification Update October 2000 Notice: The Intel® StrongARM* SA-1110 Development Board may contain design defects or errors known as errata. Characterized errata that may cause the board’s behavior to deviate from

ma2820

Contextual Info: PC100 SDRAM MODULE KMM366S924TS Revision History [Rev.O] March 24, 1999 Rev.O Mar. 1999 ELECTRONO PC100 SDRAM MODULE KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

KMM366S924BTS

Abstract: 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT Unbuffered SDRAM DIMM 168pin PC133 4Layer SPD Specification REV. 0.2 Nov. 1999 REV. 0.2 Nov. 1999 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT KMM366S823DTS-GA ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Organization : 8Mx64

KMM366S924T-G8

Abstract: KMM366S924T-GH KMM366S924T-GL
Contextual Info: KMM366S924T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM366S924T PC100 SDRAM MODULE KMM366S924T SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

KMM366S924BTS

Contextual Info: KMM366S924BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 KMM366S924BTS PC133 Unbuffered DIMM KMM366S924BTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM466S1724T2-F0

Contextual Info: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (September 1998) - Corrected the Part Number as KMM466S1724T2. REV. 3 Sept. '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2

Contextual Info: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL