KM416C256 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and

KM416C256ALJ-7

Contextual Info: KM416C256ALJ-7 1/2 IL00 * C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE -TOP VIEW- 16 DQ1 I/O 1 VDD(+5V) 2 GND 40 39 DQ16 I/O 17 18 19 DQ2 I/O 3 38 DQ15 I/O DQ3 I/O 4 37 DQ14 I/O DQ4 I/O 5 36 DQ13 I/O 22 23 24 25 6 VDD(+5V) DQ5 I/O 7 GND 35

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 16 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random a c c e s s of m em o ry ce lls w ithin th e sam e row. P ow er supply vo lta g e +5.0V o r +3.3V , a cce ss tim e

3DQ10

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or to w power) and

416C256

Abstract: KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8
Contextual Info: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 416C 256 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

3DQ10

Abstract: KM416C256B NSC55 a6az 3DQ11 KM416V256B
Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

KM416C256-7

Contextual Info: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 6 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess M emory. Its design is optimized for high perform ance applications

416C256J

Abstract: 416c
Contextual Info: PRELIMINARY KM416C256 CMOS DRAM 2 5 6 K X 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 6 C 2 5 6 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess Memory. Its design is optimized for high performance applications

Contextual Info: KM416C256LL CMOS DRAM 256K x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high pe rform ance ap p lica tio n s

km416c256b

Abstract: km416c256bj VSS011 L356
Contextual Info: KM416C256B/B L/BLL CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S a m sun g K M 4 16 C 2 56 B /B L7 B L L is a C M O S high tRAC tCAC tRC 50ns 15ns 90ns KM416C256B/BLVBLL-6 60ns 15ns 110ns

Contextual Info: SAMSUNG ELECTRONICS INC bME J> KM416C256LL Wt 7 ^ 4 1 4 2 DD134S3 b21 « S M C K CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A ccess M em ory. Its

Contextual Info: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

KM416C256D

Abstract: KM416V256D
Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and

KM416C256D

Abstract: KM416V256D
Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and

Contextual Info: KM416C256B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION The S a m sun g K M 4 1 6 C 2 5 6 B /B IV B L L is a C M O S high • Performance range: tRAC tCAC tRC KM416C256B/BIVBLL-5 50ns 15ns 90ns KM416C256B/BI7BLL-6

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time