KM23V4000B Search Results

Contextual Info: b ? E Í • 7 T b 4 m 2 Q D lb T ^ O ISflGK ÖÖ5 PRELIMINARY CMOS MASK ROM SAMSUNG E LE C T R O N IC S IN C KM23V4000B G 4M-Bit (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Fast access tim e: 150ns(max). • Supply voltage: single+3V or +3.3V

KM23V4000B

Contextual Info: PRELIMINARY KM23V4000B G CMOS MASK ROM 4M-Bit (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Fast access time : 150ns(max). • Supply voltage : single+3V or +3.3V • Current consumption Operating: 25 mA(max-) at Vccs3.0V ± 0.3

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM23C8001

Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E