KM23C4100 Search Results

KM23C16005AG

Abstract: 44TSOP2 44-TSOP2
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16

KM23C4100

Contextual Info: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)

KM23C4100B

Contextual Info: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byle Mode: 524,286 x 8 Word Mode: 26 2,14 4x1 6 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C4100H FP CMOS MASK ROM 4M-Bit (512K.X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption

40DIP600

Abstract: 40-DIP-600
Contextual Info: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C4100H CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (m ax.) • Supply voltage: single + 5V • Current consumption

4100D

Contextual Info: KM23C4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swrtchable organization 524,288 x 8{byte mode) 262,144 x 16(word mode) • Fast access time :80ns(Max.) • Supply voltage : single +SV • Current consumption

Contextual Info: KM23C4100H CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,286 x 8 Word Mode: 26 2,1 4 4 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C4100AG CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION ROM fa b ric a te d u s in g a ll in p u ts and o u tp u ts are T T L c o m p a tib le . B e c a u s e o f its a s y n c h ro n o u s o p e ra tio n , it re q u ire s no e x te rn a l c lo c k

Contextual Info: SAM SUN G E L E C T R O N I C S INC 4SE D El T'ìbmMS GGlllMM 2 • S N G K KM23C4100 CMOS MASK ROM T W G ' 3 - i 5 - 4M-Bit (512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte M ode: 524,288 x 8 W ord Mode: 26 2,14 4x16

Contextual Info: KM23C4100A CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time . 80ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C4100CET CM OS Mask ROM ELECTRONICS 4M-Bit 512K X8/256K x16 M-ROM(Extended Temperature Product) FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word mode: 262,144 x 16 • Fast access time :100ns(max.) > Supply voltage : single +5V

KM23C4100DET

Abstract: KM23C4100DT mask rom 4M
Contextual Info: KM23C4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C4100A CMOS MASK ROM 4M-Bit 512Kx8/256Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization T h e K M 2 3 C 4 1 0 0 A is a fu lly s ta tic m ask p ro g ra m m a b le ROM Byte M ode: 524,288 x 8 s ilic o n -g a te CMOS p ro c e s s

KM23C4100B

Contextual Info: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E ]> SMGK 0017013 t û o CMOS MASK ROM KM23C4100H FP 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)

Contextual Info: SAM S UN G E L E C T R O N I C S INC 42E ]> H KM23C4100H 7^4142 OGlllMT 1 CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)

Contextual Info: J\ KM23C4100H CMOS MASK ROM _ 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization The K M 23 C 4 100 H is a fully static mask programmable ROM fab ricate d usin g silicon-gate CMOS process te ch n o lo g y, and is organized e ith e r as 524,288 x 8 b it

Contextual Info: KM23C4100A CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swilchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access tim e : 150ns (max.) • Supply voltage: sin g le + 5V • Current consumption

40DIP600

Abstract: 40-DIP-600 AMP40
Contextual Info: KM23C4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258