40DIP600 Search Results
40DIP600 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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a1334
Abstract: K3N3C1 40DIP600
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K3N3C1000D-D 512Kx8 /256Kx16) K3N3C1000D-DC 40-DIP-600 K3N3C1000D-GC 40-SOP-525 40-DIP-600 015MIN a1334 K3N3C1 40DIP600 | |
Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) |
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KM23C4200D 256Kx16) 40-DIP-600 KM23C4200D KM23C4200D-12 40-DIP-600) 015MIN | |
Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption |
OCR Scan |
KM23C4200D 256Kx16) 23C4200D 23C4200D 40-DIP-600 40-DIP. | |
Contextual Info: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V |
OCR Scan |
KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V41000G 40-50P-525 KM23V41 | |
mask romContextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) FEATURES • • • • • • • • GENERAL D ESCRIPTIO N 262,144 x 16 bit organization Fast access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : SOmA(Max ) |
OCR Scan |
KM23C4200D 256KX16) 40-DIP-600 KM23C4200D 100pF KM2JC4200D-S KM23C4200D-10 KM23C42000-12 mask rom | |
KM23V4100C
Abstract: KM-23V4100CG
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KM23V4100C 8/256K 150ns 120ns KM23V4100C 40-DIP-600 KM23V4100CG -SOP-525 KM23V4100CT 44-TSOP2-400 KM-23V4100CG | |
samsung CD-ROM pin diagram
Abstract: Samsung P30
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OCR Scan |
KS88P0604 KS88P0604 KS88C0604 S88P0604) GG32b3fi MA16-MA0 samsung CD-ROM pin diagram Samsung P30 | |
KM23V4100D
Abstract: KM23V4100DG 40DIP600 40-DIP-600
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KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 KM23V4100DG 40DIP600 40-DIP-600 | |
C9014
Abstract: transistor c9014 C9014 Transistor C9014 circuit diagram C9014 pin out c9014 equivalent C9014 data sheet c9014 datasheet data sheet transistor C9014 C9014 C
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S3C9004/P9004/C9014/P9014 SAM87RI S3C9004/P9004/C9014/P9014 40-pin 40-DIP-600B 08MAX C9014 transistor c9014 C9014 Transistor C9014 circuit diagram C9014 pin out c9014 equivalent C9014 data sheet c9014 datasheet data sheet transistor C9014 C9014 C | |
A0932
Abstract: TDF-2020 BT13G.6000D
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6000D-DC 256Kx16) 100ns 120ns 40-DIP-600 6000D-DC 100pF A0932 TDF-2020 BT13G.6000D | |
Contextual Info: KM23V41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V |
OCR Scan |
KM23V41 512Kx8 /256Kx16) 100ns 120ns 23V4100D 40-DIP-600 23V4100DG 40-SO P-525 | |
C9014
Abstract: C9014 TO 92 s3p9 C9014 circuit diagram
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S3C9004/P9004/C9014/P9014 SAM87RI S3C9004/P9004/C9014/P9014 C9014 C9014 TO 92 s3p9 C9014 circuit diagram | |
KS86-SERIES
Abstract: SM6301
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KS86C0004/P0004/C0104/P0104 SAM87RI 2/A10 3/A11 4/A12 40-Pin TB860004A/0104A KS86-SERIES SM6301 | |
KS88C01416
Abstract: KS88C01424 KS88-SERIES
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KS88C01416/P01416/C01424/P01424 KS88-SERIES specifi25 KS88P01416/P01424 KS88C01416 KS88C01424 | |
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register file
Abstract: KS88C0604
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KS88C0604 12bit-programmable 208-byte KS88C0604 40-DIP-600B 003flQ5b register file | |
40-SQ
Abstract: 40DIP600
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OCR Scan |
KM23C41 512Kx8 256Kx16) 23C4100D 40-DIP-600 23C4100DG 40-SQ P-525 23C4100D 40DIP600 | |
40DIP600
Abstract: 40-DIP-600
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KM23C4100D 512Kx8 /256Kx16) KM23C4100D 40-DIP-600 KM23C4100DG 40-SOP-525 015MIN 40DIP600 40-DIP-600 | |
Contextual Info: CMOS MASK ROM K3N3V U 6000D-DC 4M-Bit (256Kx16) CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V |
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6000D-DC 256Kx16) 100ns 120ns 40-DIP-600 6000D-DC 015MIN | |
Contextual Info: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V |
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KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 | |
S3C80E5
Abstract: S3C80E7
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S3C80E5/P80E5/C80E7/P80E7 S3P80E5/P80E7 S3C80E5 S3C80E7 | |
Contextual Info: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.) |
OCR Scan |
KM23V4200D 256Kx16) 4200D 40-DIP-600C | |
ks86c0004
Abstract: KS86P0004
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KS86C0004/P0004/C0104/P0104 SAM87RI KS86C0004/P0004/C0104/P010ce KS86P0004/P0104 KS86C0104/P0104 ks86c0004 KS86P0004 | |
Contextual Info: KS86C0004/0104 MICROCONTROLLER 12 ELECTRICAL DATA ELECTRICAL DATA OVERVIEW In this section, the following KS86C0004/0104 electrical characteristics are presented in tables and graphs: — Absolute maximum ratings — D.C. electrical characteristics — I/O capacitance |
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KS86C0004/0104 40-pin 40-DIP-600B) 44-pin 44-QFP-1010B) | |
IRE5
Abstract: KT8593 KTS533
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OCR Scan |
KT8593 KTS533 KT8593 KT8583 KT8S93 IRE5 |