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    40DIP600 Search Results

    40DIP600 Datasheets Context Search

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    a1334

    Abstract: K3N3C1 40DIP600
    Contextual Info: K3N3C1000D-D G C CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


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    K3N3C1000D-D 512Kx8 /256Kx16) K3N3C1000D-DC 40-DIP-600 K3N3C1000D-GC 40-SOP-525 40-DIP-600 015MIN a1334 K3N3C1 40DIP600 PDF

    Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


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    KM23C4200D 256Kx16) 40-DIP-600 KM23C4200D KM23C4200D-12 40-DIP-600) 015MIN PDF

    Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption


    OCR Scan
    KM23C4200D 256Kx16) 23C4200D 23C4200D 40-DIP-600 40-DIP. PDF

    Contextual Info: CMOS MASK ROM KM23V4200D 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    KM23V4200D 256Kx16) 100ns 120ns 40-DIP-600 KM23V4200D 40-DIP-600) 015MIN PDF

    40DIP600

    Contextual Info: K3N3V U 1000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.)


    Original
    1000D-D 512Kx8 /256Kx16) 100ns 120ns 1000D-DC 40-DIP-600 1000D-GC 40-SOP-525 40DIP600 PDF

    Contextual Info: K3N3V U 1000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.)


    Original
    1000D-D 512Kx8 /256Kx16) 100ns 120ns 1000D-DC 40-DIP-600 1000D-GC 40-SOP-525 PDF

    K3N3C6000D-DC

    Abstract: K3N3C6000D-DC08 mask rom
    Contextual Info: K3N3C6000D-DC CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


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    K3N3C6000D-DC 256Kx16) 40-DIP-600 K3N3C6000D-DC K3N3C6000D-DC08 K3N3C6000D-DC10 K3N3C6000D-DC12 K3N3C6000D-DC08 mask rom PDF

    K3N3C1000D-DC

    Contextual Info: K3N3C1000D-D G C CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption


    Original
    K3N3C1000D-D 512Kx8 /256Kx16) K3N3C1000D-DC 40-DIP-600 K3N3C1000D-GC 40-SOP-525 K3N3C1000D-DC PDF

    Contextual Info: K3N3C6000D-DC CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original
    K3N3C6000D-DC 256Kx16) 40-DIP-600 K3N3C6000D-DC K3N3C6000D-DC12 015MIN PDF