23C4100D Search Results

40-SQ

Abstract: 40DIP600
Contextual Info: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption

1136L

Contextual Info: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption

ic tl 0741

Abstract: tl 0741
Contextual Info: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15