KJE RO Search Results

220v ac to 5v dc converter

Abstract: si9553 75551 Sharp EL Displays Vacuum-Fluorescent Display nec push-pull converter 80V 15A SI9530 uPD16302 NEC Vacuum Fluorescent Display 7555-1
Contextual Info: HVCMOS Selector Guide High-Voltage Serial-to-Parallel Converters with Source/Sink Outputs Push-Puil Output Operating Voltaae Output Current Per Channel Device Number Out­ puts HV04/ HV06 64 Serial to parallel converter w/latches, polarity and blanking 80V

ex marking code diodes

Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
Contextual Info: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

ts0524lb

Abstract: ts0524 TS0524LB-X SMU FM IC TS-0524
Contextual Info: P r o d u c t U p d a t e F i l e Permeability Sensing Type / Piezoelectric Type Toner-Concentration and Toner-Level Sensors jfiJSRoHSJB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , T S J S P s . e a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).

Contextual Info: 8-Bit Buffers Features/B enefits • Three-state outputs drive bus lines SN54LS240 SN54S240 SN54LS241 SN54S241 SN54LS244 SNS4S244 Ordering Inform ation • Low current PNP inputs reduce loading PART NUMBER PKG • 8-bit data path matches byte boundaries SN54LS240

LM124J

Abstract: LM2902 LM124 T-11213 THOMSON LM2902 ic lm324 lm324 schematic diagram LM224 LM324 A-LM2902
Contextual Info: 7=52^237 ^ r z z 7 # S C S - T H O 00230b0 M S O ö • N L M K a n e B @ iiiL ii( B T O B ie 8 S G S-THOMSON 1 2 4 , A - L M L M 2 2 4 , A 3 2 4 . A - L M 2 9 0 2 3QE D LOW POWER QUAD OPERATIONAL AMPLIFIERS LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI

C254A

Abstract: LU68C254A
Contextual Info: ¡ 1 1 * |C W 0 R K S LU68C254A 32K X 8 Low Voltage CMOS Static RAM PRELIMINARY, JANUARY 1995 FEATURES FUNCTIONAL DESCRIPTION • T h e UJ68C254A is a general p u rp o s e low p o w e r a n d low voltage op eratin g Static R an d o m Access M em ory fabricated u sin g IC W O RK S' ad v an ced

BCY77

Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

N8X3

Contextual Info: Signetics 8X360 Memory Address Director MAD Product Specification Microprocessor Products DESCRIPTION FEATURES The 8X360 Memory Address Director (MAD) (Figure 1), is a high-speed, per­ formance oriented peripheral. The 8X360 reduces bookkeeping and soft­

Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
Contextual Info: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

AM29F040B

Contextual Info: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology

LH536

Abstract: AS29X 29LV002-150 kje z1
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current

capacitor poliester 100nf

Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Contextual Info: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications

Contextual Info: l U II^ E a r n iM I 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b S Y N C B U R S T S S R A M 3.3V Vdd, 3.3V I/O, Flow-Through S P MT58L32L32F' FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

Contextual Info: PRELIMINARY l^ iic n a N 4 MEG X MT16LD464 X 64 DRAM MODULE DRAM 4 MEG x 64 M O n i l l F IV IV U U U b 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times