KJE RO Search Results
KJE RO Datasheets Context Search
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KJE BAV99
Abstract: "Marking code" KJE SOT-23 Diode bav99 kje KJE transistor marking kje std transistor kje BAV99 BAV99-7-F kje sot23 BAV99 application
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BAV99 OT-23 AEC-Q101 DS12007 KJE BAV99 "Marking code" KJE SOT-23 Diode bav99 kje KJE transistor marking kje std transistor kje BAV99 BAV99-7-F kje sot23 BAV99 application | |
marking kje
Abstract: "Marking code" KJE SOT-23 Diode bav99 kje KJE BAV99 BAV99 application KJE SOT23 BAV99-7-F Diode bav99 std transistor kje KJE transistor
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BAV99 AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS12007 marking kje "Marking code" KJE SOT-23 Diode bav99 kje KJE BAV99 BAV99 application KJE SOT23 BAV99-7-F Diode bav99 std transistor kje KJE transistor | |
220v ac to 5v dc converter
Abstract: si9553 75551 Sharp EL Displays Vacuum-Fluorescent Display nec push-pull converter 80V 15A SI9530 uPD16302 NEC Vacuum Fluorescent Display 7555-1
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HV9100 SI9100 TSC9100 SI9101 TSC9101 I9110 I9111 SI9120 HV9101 HV9110 220v ac to 5v dc converter si9553 75551 Sharp EL Displays Vacuum-Fluorescent Display nec push-pull converter 80V 15A SI9530 uPD16302 NEC Vacuum Fluorescent Display 7555-1 | |
ZTR 200
Abstract: 1602G SFF1601G SFF1608G
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SFF1601G SFF1608G ITO-22QAB ITO-22DAB MIL-STD-202, JC/10 SFF1608G) ZTR 200 1602G SFF1608G | |
ex marking code diodes
Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
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BAV99 AEC-Q101 J-STD-020 MIL-STD-202, DS12007 ex marking code diodes SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q | |
60c31
Abstract: 4kx8 rom 60C51 80C31 80C51 33jp TA-035
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60C51/31 80C51/ 80C31 60C51 60C31 12MHz 40DIP 44PLCC 4kx8 rom 80C31 80C51 33jp TA-035 | |
ts0524lb
Abstract: ts0524 TS0524LB-X SMU FM IC TS-0524
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2002/95/EC, 0to50oC ts0524lb ts0524 TS0524LB-X SMU FM IC TS-0524 | |
BCY77VII
Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
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BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor | |
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Contextual Info: 8-Bit Buffers Features/B enefits • Three-state outputs drive bus lines SN54LS240 SN54S240 SN54LS241 SN54S241 SN54LS244 SNS4S244 Ordering Inform ation • Low current PNP inputs reduce loading PART NUMBER PKG • 8-bit data path matches byte boundaries SN54LS240 |
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SN54LS240 SN54S240 SN54LS241 SN54S241 SN54LS244 SNS4S244 SN54LS240 SN54LS241 SN54LS244 | |
LM124J
Abstract: LM2902 LM124 T-11213 THOMSON LM2902 ic lm324 lm324 schematic diagram LM224 LM324 A-LM2902
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00230b0 LM124, -LM224, LM324 -LM2902 DIP14 CERDIP14 LCC20 -LM224 LM124J LM2902 LM124 T-11213 THOMSON LM2902 ic lm324 lm324 schematic diagram LM224 A-LM2902 | |
C254A
Abstract: LU68C254A
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LU68C254A UJ68C254A ID68C254A 120ns/150ns 68C254A/0 C254A | |
BCY77
Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
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BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor | |
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Contextual Info: TOSHIBA TC58257AP/AF-20, -25 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY Description Th e T C 5 8 2 5 7 A P /A F is a 3 2 ,7 6 8 w o rd x 8 bit electrically ch ip erasable p ro g ra m m a b le read only m e m o ry m o ld e d in a 2 8 -p in |
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TC58257AP/AF-20, 8257A | |
N8X3Contextual Info: Signetics 8X360 Memory Address Director MAD Product Specification Microprocessor Products DESCRIPTION FEATURES The 8X360 Memory Address Director (MAD) (Figure 1), is a high-speed, per formance oriented peripheral. The 8X360 reduces bookkeeping and soft |
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8X360 8X360 8X305 6X360 8X360. N8X3 | |
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AM29F040BContextual Info: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology |
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Am29F040B Am29F040 AM29F040B | |
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Contextual Info: NJ U 6 4 3 6 PRELIMINARY 1/4 DUTY LCD D R I V E R W I T H GENERAL DESCRIPTION The NJU6436 is a 1/4 duty LCD driver for segment type LCD panel with key scanning, Ir receiving and LED driv ing function. The LCD driver consists of 4-common and 60-segnent drives up to 240 segments and LED driver drives 1 LED |
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NJU6436 60-segnent | |
LH536
Abstract: AS29X 29LV002-150 kje z1
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AS29LV 002T-100PI 002B-100LI AS29LVQQ2T-I0QLI 32-pin 02T-80PC AS29LV002B-80LC S29IV LH536 AS29X 29LV002-150 kje z1 | |
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Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors |
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8/128K AS29F200T-120TI AS29F200B-5SSC AS29F200B-70SC AS29F200B-70SI AS29F200B-90SC AS29F200B-90SI AS29F200B-120SC AS29F200B-120SI AS29F200T-S5SC | |
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Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current |
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AS29F002T-120PC S29F002T-120P -I20T S29F002B -120P 1-40008-A | |
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Contextual Info: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times |
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MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 | |
capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
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TPCAM0198 5OKB10 B-1050 capacitor poliester 100nf CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA | |
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Contextual Info: l U II^ E a r n iM I 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b S Y N C B U R S T S S R A M 3.3V Vdd, 3.3V I/O, Flow-Through S P MT58L32L32F' FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd |
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ck 66 ul94v-0 lcd
Abstract: ESCC3009 03028-BP TAJB SHAPE lct thyristor M28861/05 CECC 30701-007 3001 8AT electrolytic capacitor 2200 micro farad 63V M28861/01-016TB
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AS9100, TS16949-2002 ISO9001-2000. M307-N ck 66 ul94v-0 lcd ESCC3009 03028-BP TAJB SHAPE lct thyristor M28861/05 CECC 30701-007 3001 8AT electrolytic capacitor 2200 micro farad 63V M28861/01-016TB | |
kje w6Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port. |
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KM428C257 KM428C257 130ns 150ns 110ns 40-PIN 40/44-PIN KM4216C/V255/6/8 64-PIN D02E313 kje w6 | |