KHB6D0N40F2 Search Results

6D0N40F

Abstract: TO-220IS KHB6D0N40F2
Contextual Info: SEMICONDUCTOR KHB6D0N40F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 6D0N40F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB6D0N40F2 KHB6D0N40F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

D 92 M - 02 DIODE

Abstract: KHB6D0N40F KHB6D0N40F2 KHB6D0N40P
Contextual Info: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: SEMICONDUCTOR KHB6D0N40P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB6D0N40P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and