KH SOT23 Search Results

Contextual Info: M icrochip 24AA128/24LC128/24FC128 128K I2C CMOS Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPE PDIP Vcc Range Part Number Max Clock Frequency Temp Ranges 24AA128 1.8-5.5V 400 kH zt C 24LC128 2.5-5.5V 400 kHz* I, E 24FC128 2.5-5.5V 1 MHz I A0 □ • Low power CMOS technology

Contextual Info: FM M J5484 to FM M J5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PAR TM AR KIN G DETAILS: FM M J5484 - H 84 F M M J 5 4 8 5 - H 85 F M M J 5 4 8 6 - H 86 APPLICATION AREAS: * VH F/U H F AMPLIFIERS ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C

CCIR 468-2

Abstract: TDA3830
Contextual Info: DEVELOPMENT DATA TDA3830 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. r - BTSC-STEREO / SAP / DBX DECODER GENERAL DESCRIPTION The T D A 3 8 3 0 is a sound processor fo r stereo/second audio program m e SAP baseband signals in

FM receiver CIRCUIT DIAGRAM and specification

Abstract: FM radio CIRcuit DIAGRAM RF Amplifier AM receiver TEA5592 AM FM radio ceramic 468 kHz pin diagram of AM receiver tt 2232 toko coils 10.7 mhz ac voltage stabilizer circuit diagram
Contextual Info: DEVELOPMENT DATA T h is d ata sheet c o n ta in s advance in fo rm a tio n and s p e cifica tio n s are su b je ct t o change w it h o u t n o tic e . TEA5592 AM/FM RADIO RECEIVER CIRCUIT GENERAL DESCRIPTION The T E A 5 5 9 2 is a 24-pin integrated radio c irc u it designed fo r use in all personal audio and car radio

FM receiver CIRCUIT DIAGRAM and specification

Abstract: FM RADIO RECEIVER circuit diagram ac voltage stabilizer circuit diagram ceramic 468 kHz FM radio CIRcuit DIAGRAM MC115 AM FM radio toko if coils 10.7 mhz fm receiver toko IF FM detector
Contextual Info: D E V E L O P M E N T DATA T h is data sheet c on ta ins advance in fo rm a tio n and sp e cificatio n s are subject to c hange w ith o u t notice. TEA5594 AM/FM RADIO RECEIVER CIRCUIT G E N E R A L DESCRIPTIO N The T E A 5 5 9 4 is a 32-pin integrated radio c irc u it designed fo r use in all E lectronic Tuned Radio ETR

BCW60 Series

Abstract: BCW60 BCW60A BCW60B BCW60C BCW60D
Contextual Info: • bbSB^Bl ÜÜEM573 Ufi H A P X N AMER PHILIPS/DISCRETE BCW60 SERIES b?E D J \ _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a m icro m in ia tu re p lastic envelope, intended fo r lo w level, lo w noise, low freq u e n cy purpose applica tio ns in h y b rid circu its.

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

Contextual Info: FMMT4402 FMMT4403 SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS: FMMT4402 - 2K FMMT4403 - 2L ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

CMA102

Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
Contextual Info: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)

RADIO RECEIVER IC tea5591

Abstract: FM Receiver Circuits TEA5591A FM radio CIRcuit DIAGRAM ceramic 468 kHz ac voltage stabilizer circuit diagram Applications for TEA5591 am fm frontend AM FM radio TEA5591A am receiver circuit diagram and c
Contextual Info: DEVELOPMENT DATA This data sheet contains advance inform ation and TEA5591A specifications are subject to change w ith o u t notice. y v AM/FM RADIO RECEIVER CIRCUIT G E N E R A L DESC RIPTIO N The T E A 5 5 9 1 A is a 24-pin integrated radio c irc u it, derived fro m the T E A 5591 and is designed fo r use

diode marking DL

Abstract: marking code JD BAW56 SOT23 JE IMBD4148-A2 A3 marking diode marking code 10 sot23 BAL99 BAV100 BAV101 BAV102
Contextual Info: Surface M o u n t Sw itching Diodes 350mW Switching Diodes/SOT23 M a rk in g Code* Peak Reverse Voltage Maximum Reverse C u rre n t @ 25°C Capacitance V R = VF = 0 Reverse R ecovery T im e @ VpK V u. lR ma > vR PRV V _U- M a x im u m F o rw a rd V olta g e D rop

SST4400

Abstract: transistor bI 240 2n4401 C31 2n4401 smt 2n4401 die
Contextual Info: DIE No. r NPM Medium Power TRANSISTOR DIE No. C— 31 • DESCRIPTION Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage V cbo 50 V Emitter-Base Voltage V ebo 6 V Collector Current Continuous lc 800 mA Parameter SST SOT23 200 SMT (SC59)

ZR25D01

Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ZR25D ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR25D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage reference o f 2.5 volts. The device is available in a sm all outline SOT23 surface m ount

bss69r

Contextual Info: BSS69 BSS70 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS69 - L2 BSS70 - L3 BSS69R - L6 BSS70R - L7 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT V V v CBO -4 0 C o lle cto r-E m itte r V oltag e V CEO -4 0 E m itter-B ase V o lta g e

lm434

Abstract: lm1111 IM1117 SDT23 S0T223-4 rgb led panel RSDS LM4340 LM2710 T0220-11 SP SOT23-5
Contextual Info: micro SMD SC-70 0JA 480 °c/w SOT-23 0JA 240 °C/W PSOP-8 0JA 43 °C/W SOT-223 0JA 220 °C/W so / j ^ h a m m m 'g . 0 J A 100-190 °C/W 0JA75-11OX/W ♦ TO-263 ( K S M Ê Â S f i* ) 0JA 35-60 °C/W * ^ 8 ^ 1 ® (MSOP) 0JA 220 °C/W CSP-32 0JA 88 °C/W

Contextual Info: FMMT3903 FMMT3904 SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FM M T3903 - 1W FM M T3904 - 1A ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL C ollector-B ase V oltag e C o lle c to r-E m itte r V oltage V C BO E m itter-B ase V oltage C on tin u o u s C ollecto r C urrent

BCB60

Abstract: BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C BCB59
Contextual Info: • bhS3n31 □ÜS447CI 755 BIAPX BC859 BC860 b?E J> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package p rim a rily intended f o r low-noise in p u t stages in tape recorders, h i-fi a m p lifiers and o th e r audio freq u e n cy e q u ipm ent in th ic k and th in -film h y b rid circu its.

br b2d

Abstract: TRANSISTOR D 1853 SMD Transistor 7e lg smd transistor br- b2d transistor smd marking LE TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc 5B7 Marking smd TRANSISTOR code 7e
Contextual Info: m bbS3T31 Ü02S67S b2D H A P X N AMER PHILIPS/DISCRETE PMBT5088 b?E D J V _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal tran sisto r in plastic SOT-23 envelope intended fo r low-noise in p u t stages in audio e quip m e n t, when using SM D tech no lo g y.

S0T23-5

Abstract: TSS0P16 S0T23 sc 6038 LM4765T LM2710 M1117 SDT23 TSS0P14 LM1117
Contextual Info: micro SM D SC-70 SOT-23 'M R * s y ? ï$ 0 JA 480 °C/W 0JA 240 "C/W PSOP-8 SOT-223 0 J A 220 °C/W SO ( /J X S 0 M * 0 J A 43 °C/W 0 J A 100-190 °c/w 0JA75-11O oC/W ♦ * TO-263 8 31 ö l TSSOP 0 J A 60-130 “C /W (M SO P) 0 J A 35-60 "C/W 0 j a 220 °C/W

c857

Abstract: TRA BC857 KH SOT23
Contextual Info: r Z 7 SGS-THOMSON Ä T # Kffloeœiniera «® BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

KH SOT23

Contextual Info: ., MMBD914 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1 P. See 1N4148 for characteristics. Absolute Maximum Ratings' Symbol TA = 25 °C unless otherwise noted Parameter Value Units W|V Working Inverse Voltage 75 V lo

TOSHIBA 2SA1213Y

Abstract: S8520E50MC E50M 2SA1213Y MA737 IFR7606 c50mcb S-8520B36MC-ARV-T2 seiko 320 240 S-8520
Contextual Info: Rev.7.4_io PWM Control & PWM/PFM Control Step-Down Switching Regulator-Controllers Q_R«9n/ft* 9 i <5 • " eries The S-8520/8521 Series consists of C M O S step-dow n sw itching regulatorcontrollers with P W M -control S-8520 and P W M /P F M -sw itched control (S8521). These devices contain a reference voltage source, oscillation circuit,

sot23 marking code 158

Abstract: KH SOT23
Contextual Info: SIEMENS BCR 158 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor <R1=2.2lc£2l R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 158 WIs 1=B Q62702-C2338 Package 2=E 3=C SOT-23

BC856B

Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Contextual Info: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V