KE 76 DIODE Search Results
KE 76 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
KE 76 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1,5 KE6,8.1,5 KE170CA - > 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and bidirectional Transient Voltage Suppressor diodes !"#$ % & ' ) )*)+, |
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KE170CA | |
Contextual Info: 1,5 KE6,8.1,5 KE170CA -* > 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Maximum Stand-off voltage: 5,5 . 145 V Features |
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KE170CA | |
5ke6Contextual Info: 1,5 KE6,8.1,5 KE170CA -* > 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and bidirectional Transient Voltage Suppressor diodes !"#$ % & ' ) )*)+, |
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KE170CA 5ke6 | |
LTC4098-3.6
Abstract: GQ36
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KE170CA LTC4098-3.6 GQ36 | |
LTC4098-3.6
Abstract: KE 76 DIODE
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KE170CA KE170CA LTC4098-3.6 KE 76 DIODE | |
Contextual Info: SDP8475-201 Low Light Rejection Phototransistor FEATURES • T-1 plastic package • Low light level immunity • 20° nominal acceptance angle • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8475 is an NPN silicon phototransistor with |
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SDP8475-201 SEP8505 SEP8705 SDP8475 SEP8505-002 | |
ATIC 39 b4Contextual Info: KeyCoder UR5HCFJL USAR product sp ecificatio ns Self Power Management Laptop/Notebook Keyboard Encoder GreenCoder™ UR5HCFJL Description Features The UR5HCFJL G reenC oder ™ is a unique, q uasi-zero pow er keyboard e ncod er that provides an optim um |
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bl s37
Abstract: TRANSISTOR D206 D101 D105 D220 PT6584 PT6584-LQ s8655
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PT6584 PT6584 MS-026 bl s37 TRANSISTOR D206 D101 D105 D220 PT6584-LQ s8655 | |
transistor s72
Abstract: PT6530-LQ PT653 ptc6530-lq transistor s68 DIODE S45 transistor s49 PT6530 transistor D209 D-222
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PT6530 PT6530 MS-026 transistor s72 PT6530-LQ PT653 ptc6530-lq transistor s68 DIODE S45 transistor s49 transistor D209 D-222 | |
IR diodes TFK 4 245
Abstract: TFK 751 IR diodes TFK 4 940 TFK 940 IR diodes TFK 4 7313 28 pin TFK 925 TFK diodes CQY 65 TFK diodes application
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IN5221B
Abstract: IN5221 1n5221 1n5224b-1
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1N5221B 1N5271B 1N5271B DO-35 500mW IN5221B IN5221 1n5221 1n5224b-1 | |
1N 414 B
Abstract: 1N 3000 DIODE 1N4728A 1N4729A zener diode 1vu
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1N4728A-4764A/ZM4730A-4764A DO-41 M1L-STD-202, DO-41 000G714 1N 414 B 1N 3000 DIODE 1N4728A 1N4729A zener diode 1vu | |
Contextual Info: TO SHIBA 1SV287 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 287 Unit in mm UHF SHF TU N IN G • • • • High Capacitance Ratio : C2 v / C 2 5 V = 7-6 TYP. Low Series Resistance : rs = 1.9fl (TYP.) Excellent C-V Characteristics, and Small Tracking Error. |
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1SV287 | |
SG3823
Abstract: ST D132 SG-45 diode PT6332 d114 SG-47 SG10 SG14 SG15 sg3526
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PT6332 PT6332 MS-026 SG3823 ST D132 SG-45 diode d114 SG-47 SG10 SG14 SG15 sg3526 | |
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KA2418
Abstract: GE DIODE ka2428 diode I-35 L
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KA2418/28 KA2428) 14Kil, 100nF 1300B: KA2418 KA2428 KA2418 GE DIODE ka2428 diode I-35 L | |
SJ 76 A DIODEContextual Info: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC |
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100GB125DN SJ 76 A DIODE | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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LT 5206
Abstract: 1/LT 5206 LT/SG3527A
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200GB125D LT 5206 1/LT 5206 LT/SG3527A | |
kuka
Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
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kuka-2006-de-inhalt M24x1 150mm 120mm kuka kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02 | |
Contextual Info: TVS DIODES P6SMBJ Series — 600 Watt Surface Mount P6SMBJ Series Features • 600 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor • |
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RS-481-A E135015 P6SMBJ160 P6SMBJ160A P6SMBJ170 P6SMBJ170A | |
ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
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F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode | |
DM 311 BG 40
Abstract: TVS AE
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RS-481-A E135015 DO214AA UL94V-0 DM 311 BG 40 TVS AE | |
Contextual Info: Light Emitting Diodes Leaded mini-mold LEDs SLN-210 Series T h e S L N - 2 1 0 s e r ie s are u ltra -sm a ll • E x te rn a l d im ensions Unit: mm L E D s with a high lu m in o us efficiency. F o u r c o lo r s a s well a s b right red are available, and they are suitable for use |
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SLN-210 SLN-210VC SLN-210DC SLN-210YC SLN-210MC | |
SKE 1/04
Abstract: SKE+1/04 SEMIKRON SKE SKE 2.5/16 SKE 2.5/12 SKE 2.5/08 SKS1/04 sks 1/16 SKE+2.5/16 ske 1/12
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GQQ1771 fll3fcb71 fci71 SKE 1/04 SKE+1/04 SEMIKRON SKE SKE 2.5/16 SKE 2.5/12 SKE 2.5/08 SKS1/04 sks 1/16 SKE+2.5/16 ske 1/12 |