D103 Search Results

TL306

Abstract: TIL306 TIL307 TL307 COUNTER LED bcd d1034 Numeric Display with Logic "Seven Segment LED Display" 1N3064 BCD counter
Contextual Info: TIL306, TIL307 NUMERIC DISPLAYS WITH LOGIC SLBS001 – D1034, JUNE 1982 – REVISED SEPTEMBER 1992 SOLID-STATE DISPLAYS WITH INTEGRAL TTL MSI CIRCUIT CHIP FOR USE IN ALL SYSTEMS WHERE THE DATA TO BE DISPLAYED IS THE PULSE COUNT • • • • • • •

Liquid Level

Contextual Info: Optical Liquid Level Sensors D103 Series * M12 Screw-in Body * Low cost * Compact size * Wide range of commercial and industrial applications. Features: Standard Temperature High Temperature D103 M12 Threaded Probe Housing Digital - High in Air Output Function

Contextual Info: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

D1031UK

Contextual Info: TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED Dimensions in mm. 2.313 ± 0.2 5.50 ± 0.15 0.3 R. 4 PL. 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 4 5 3 6 2 7 1

C 5387

Abstract: D1034UK UT70-25
Contextual Info: TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

D1031UK

Abstract: VG13
Contextual Info: TetraFET D1031UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED Dimensions in mm. 2.313 ± 0.2 5.50 ± 0.15 0.3 R. 4 PL. 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL.

Contextual Info: S T U/D1030P L S amHop Microelectronics C orp. P reliminary May.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -18A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.

74LS83

Abstract: ttl 7483 FULL ADDER 74S181 ttl 7480 74283 74LS181 7483 fairchild ttl 7483 D-104 74181
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS D IG ITA L-TTL D102 93H/74H183 D101 9304 D100 54/7480 12 9 10 11 12 13 1 4 2 C 3 1513 1 14 1 2 B 3 4 13 12 11 A FULL ADDER 1 S S Co 6 7 5 TTT D103 54/7482 2 3 14 13 10 11 e 7 3 4 6 10 1 16 5 S 9 6 3 2 14 15 12 11 Vcc = Pin 16

C 5387

Abstract: FT50-75 UT70 D1034UK UT85 UT85-15 UT70-25
Contextual Info: TetraFET D1034UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N

Contextual Info: TetraFET D1034UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N

Contextual Info: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

pulse 01940

Abstract: 01948 D1030N
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1030N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften

hf amplifier 100w

Abstract: d1036uk
Contextual Info: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

D1030UK

Abstract: 7808 cv
Contextual Info: TetraFET D1030UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

UT-085

Abstract: D1030UK UT-034-25 064R ut 7808 D1030 7808 cv
Contextual Info: TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: Technische Information / technical information Schnelle beschaltungslose Diode D1031SH Fast Hard Drive Diode Key Parameters enndaten VRRM 4500 V IFAVM 1120 A TC=85 °C IFSM VT0 23000 A 3570A (TC=55°C) 1,78 V rT 0,968 mΩ RthJC 10 K/kW Clamping Force 27 … 45 kN

IC103

Abstract: IC106 PINHD-2X17 hansmann
Contextual Info: If PWR = +5V, replace D103 and IC107 7805 with wires across their inputs and outputs, and mount D104. If PWR >= +7V, mount D103 and IC107 as intended, but do not mount D104. digital +5V/1 +5V/1 +5V/1 1N5818 1N5818 + 1µF 1µF C122 + 100nF C124 C119 10nF

Contextual Info: nil Vrr r = mi TetraFET SEM E D1031UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -2 8 V -1 G H Z SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP

TIL307A

Abstract: TIL306A TIL307 til306 d1034r
Contextual Info: TIL306, TIL306A, TIL307, TIL307A NUMERIC DISPLAYS WITH LOGIC D1034, R E V IS E D JU N E 1982 S O L ID -S T A T E D IS P L A Y S W IT H IN T E G R A L T T L M S I C IR C U IT C H IP F O R U SE IN A L L S Y S T E M S W H E R E T H E D A T A T O BE D IS P L A Y E D IS

TIL305

Contextual Info: 5 x 7 TIL305 ALPHANUMERIC DISPLAY D1033, M A Y 1971 — R E V IS E D M A R C H 1983 S O L ID -S T A T E D IS P L A Y W IT H R E D T R A N S P A R E N T P L A S T IC E N C A P S U L A T IO N » 7,62-mm 0.300-inch Character Height • High Luminous Intensity

Contextual Info: TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 F 8 7 6 G 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1031UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED Dimensions in mm. 2.313 ± 0.2 5.50 ± 0.15 0.3 R. 4 PL. 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL.