KC 2026 Search Results

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

kc 2026

Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
Contextual Info: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.

141C

Abstract: LC74HC51 T370
Contextual Info: SA N Y O = ; ¥ * 2 § - n - LC74HC51 f t Na2 0 2 6 a C M Q SM & M M aV 'vf <.256 X D u a l 2 - In p u t A N D / Q F | ìm t e fis s r G a te ¥mM>fWñzi~X Na*2026 WS L C 7 4 I I C I 5 1 Ì J AND OR 1NVEKTER I Ç % ;? 1 A -y -5. / / • C M O S f/ V J > y - h 7 ' D t 3 l t « 8 l / ,

930 dtl

Abstract: la 4508 ic schematic diagram sn524a eel 19 2005 transformer sn15846n J 5027-R sn15846 CREATIVE 5507 transistor kc 2026 Jacinto
Contextual Info: Notes on This Fi rst Edition This first edition of TI's Integrated Circuits catalog contains currently published data sheets covering SOLID CIRCUIT semiconductor networks. As new data sheets are published, they will be distributed for insertion in the appropriate sections of this basic Tightleaf®

kc 2026

Abstract: PJSRV05W-4LC marking KC
Contextual Info: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.

transistor kc 2026

Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
Contextual Info: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart­

ECC 808 tube

Abstract: ecc 808 ecc808 nf schaltungen ECC 808 ra 220 telefunken ra 200 MAX14G telefunken tubes 808 triode nf schaltungen
Contextual Info: Netzröhre für GW-Helzung indirekt geheizt Parallelspeisung ECC 808 TiLEFUNKEN N F-Doppeltriode DC-AC-Heating Indirectly heated connected in parallel AF-Twin Triode Vorläufige technische Daten * Tentative data Uf 6,3 If 340 V mA Meßwerte • M easuring values

kc 2026

Contextual Info: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.

kc 2026

Contextual Info: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.

transistor kc 2026

Abstract: RNS-D Germanium Transistor M/transistor kc 2026
Contextual Info: MIL-S-19500/68A • a Miv "\o££ J *^rw w SUPERSEDING M IL -T -19500/68 Sig C 10 F ebruary 1959 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE;, TRANSISTOR, 2N- i2o> -PNP* GERMANIUM* SWITCHING T his specification is m andatory for use by a ll D epart­ m ents and A gencies of the D epartm ent of Defense.

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

PJSRV05W-4LC

Contextual Info: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.

icl 2025

Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

sanyo 2033

Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
Contextual Info: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

transistor c2274

Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
Contextual Info: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).

Contextual Info: Formosa MS KLFM0520-N THRU KLFM0540-N Chip Low Leakage Schottky Barrier Rectifier List List. 1 Package outline. 2

transistor kc 2026

Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Contextual Info: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,

2N1652

Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Contextual Info: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­

RGN2004

Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Contextual Info: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla

SMBJ15A

Abstract: SMBJ40A SMBJ130A SMBJ170A SMBJ130CA SMBJ58A SMBJ100A SMBJ6.5A SMBJ12A SMBJ28A
Contextual Info: SMBJ5.0A . SMBJ188A SMBJ5.0CA . SMBJ188CA 600 W Surface Mount Transient Voltage Suppressor Reverse stand-off Voltage 5.0 ÷ 188 V Peak Pulse Power Rating At 1 ms. Exp. 600 W DO-214AA SMB R FEATURES • Low profile package • Ideal for automated placement

Contextual Info: M B R 1535CT - M B R 15150CT TAIWAN SEMICONDUCTOR s 15.0 AMPS. Schottky Barrier Rectifiers RoHS TO-22QAB C O M P L IA N C E /4xa.-k: Features P la s t ic m a te r ia l u s e d c a r r ie s U n d e r w r it e r s La boratory C lassifications 94V 0 M e Lai s ilic o n ju n c t io n , m a jo r i ly c a r r ie r c o n d u c tio n

KB 7780

Abstract: yd 803 ic
Contextual Info: 4 0 0 W A T T S U R F A C E M O U N T SMAJ Series Features 400 watt peak pulse power dissipation Available in voltages from 5.0V to 170V Unidirectional and bidirectional Glass passivated junction Low clamping factor Each device 100% surge tested Absolute Maximum Ratings