K8A5 Search Results

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

ba508

Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

k8a55

Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Contextual Info: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

BA425

Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

transistor K8A50D

Abstract: k8a50d
Contextual Info: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)

k8a55da

Abstract: TK8A55DA K8A55D k8a55 TK8A55D
Contextual Info: K8A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A55DA ○ スイッチングレギュレータ用 単位: mm : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 1.14 ± 0.15 0.69 ± 0.15 Ф0.2 M A 絶対最大定格 (Ta = 25℃)

K8A50D

Abstract: TK8A50D K8A50 VDD400 K*A50D TK8A50
Contextual Info: K8A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.7 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 4.0 S (標準)

MX29GL256

Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes

TK8A55DA

Contextual Info: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)

K8A50D

Contextual Info: K8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 0.76 High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)

TK8A55DA

Abstract: k8a55da
Contextual Info: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

T5371

Abstract: K8A6415EBB
Contextual Info: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.

SAMSUNG MCP

Abstract: MCP Samsung CM1453-04CP CMD
Contextual Info: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology

K8A50D

Abstract: K8A50DA TK8A50DA K8A50
Contextual Info: K8A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A50DA スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.76 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2

k8a55da

Abstract: TK8A55DA K8A55D k8a55 TK8A55D TK8A55
Contextual Info: K8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

transistor K8A50D

Abstract: K8A50D TK8A50D K8A50 K*A50D tk8a50
Contextual Info: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

K9HCG08U5M

Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs

K8A50D

Abstract: K8A50 TK8A50D TK8A50 K8A50DA TK8A50DA
Contextual Info: K8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)

transistor K8A50D

Abstract: K8A50D tk8a50d K8A50 TK8A50 TK8A50D equivalent C20500
Contextual Info: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)

K8A50D

Abstract: K8A50 TK8A50D K*A50D TK8A50 K8A5 2-10U1B TK8A50D equivalent
Contextual Info: K8A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.7 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 4.0 S (標準)