K63 PACKAGE Search Results

Contextual Info: SU203PR-K63 General Information Extended Product Type: Product ID: EAN: Catalog Description: Long Description: SU203PR-K63 2CDS273327R0607 4016779848602 Miniature Circuit Breakers MCBs - SU200PR - Number of Poles 3 - Tripping characteristic K SU203PR-K63 MCB K-Char., 10kA, 63A, 3P, RTT UL 489, Ring Cable Lug

transistor k70

Abstract: MIL-STD-1835 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A 2 Package Diagram

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K63 Sub-Family Document Number: K63P144M120SF5 Rev. 2, 01/2014 K63P144M120SF5 Supports the following: MK63FN1M0VLQ12, MK63FN1M0VMD12 Features • Performance – Up to 120 MHz ARM Cortex®-M4 core with DSP

MIL-STD-1835

Abstract: transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 51-80056 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 51-80057 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 51-80058 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A

Contextual Info: Freescale Semiconductor, Inc. Data Sheet: Technical Data K63P144M120SF5 Rev 3, 04/2014 Kinetis K63F Sub-Family Data Sheet MK63FN1M0VLQ12 MK63FN1M0VMD12 120 MHz ARM Cortex®-M4-based Microcontroller with FPU The K63 product family features high memory densities, low

Contextual Info: Freescale Semiconductor, Inc. Data Sheet: Technical Data Document Number K63P144M120SF5 Rev 5, 12/2014 Kinetis K63F Sub-Family Data Sheet MK63FN1M0VLQ12 MK63FN1M0VMD12 120 MHz ARM Cortex®-M4-based Microcontroller with FPU The K63 product family members are optimized for cost-sensitive

MK484

Abstract: BC548 ,BC558 capacitor 100nf monoblock ZN414 AM antenna bar coil gold detector MK-484 BC548 and zn414 coil gold detector circuit potentiometer 10k ohm pcb mount single turn
Contextual Info: K63 ONE-CHIP AM RADIO This project presents the building blocks of modern day mini-sized AM radio receivers as found in key-rings, watches & palm-sized radios. They are: • • • the Tuned Radio Frequency TRF front end a single chip AM radio IC, and amplification of the audio signal into a speaker

marking D3 sot363

Abstract: sot 363 marking tm marking code D3 SOT363 MARKING CODE 13 SOT363 sot-363 MARKING
Contextual Info: Central CMKD6263 TM Semiconductor Corp. SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE 70V • ULTRAmini PACKAGE • REQUIRES LESS BOARD SPACE THAN 3

MARKING d3 sot363

Abstract: marking code D3 SOT363 sot 363 marking tm K63 Package d1 marking code
Contextual Info: Central CMKD6263 TM Semiconductor Corp. SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE 70V • ULTRAmini PACKAGE • REQUIRES LESS BOARD SPACE THAN 3

DIC20

Abstract: CY10E422L-5DMB
Contextual Info: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

MARKING CODE 190 SOT363

Contextual Info: Central" CMKD6263 Sem iconductor Corp. SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE 70V • ULTRAmini PACKAGE • REQUIRES LESS BOARD SPACE THAN 3

Contextual Info: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA

A301D

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin Features • 1024 x 4 ECL Static RAM 1024 x 4 -b it organization • Open em itter output for ease of memory expansion • Ultra high speed/standard power

ALC113

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 1024 x 4-bit organization • Ultra high speed/standard power

CY100E474

Abstract: CY10E474 E474 10E474-5 CY10E474L-5DC
Contextual Info: CY10E474 CY100E474 IK x 4 ECL Static RAM SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 1024 x 4-bit organization • Ultra high speed/standard power

CY10E422L-5KMB

Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
Contextual Info: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA

MARKING CODE 190 SOT363

Abstract: kd35
Contextual Info: Central" CMKD6263 Semiconductor Corp. SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES FEATURES: • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE 70V • ULTRAmini PACKAGE • REQUIRES LESS BOARD SPACE THAN 3 INDIVIDUAL DIODES

Contextual Info: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion

10E474

Contextual Info: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR Features • On-chip voltage compensation for im­ proved noise margin • 1024 x 4-bit organization • Ultra high speed/standard power — *AA = 3.5 ns • Open emitter output for ease of memory expansion • Industry-standard pinout

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

TR10E

Abstract: CY100E422L5DC C4221
Contextual Info: CY10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA

Contextual Info: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description