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    K337 Search Results

    K337 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SK337N
    Shikues Semiconductor 20V/3.0A, RDS(ON)=80mΩ@VGS=4.5V, 90mΩ@VGS=2.5V, SOT-23, Power Management, Portable Equipment. Original PDF
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    K337 Price and Stock

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    Cornell Dubilier Electronics Inc AFK337M50H32T-F

    CAP ALUM 330UF 20% 50V SMD
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    DigiKey () AFK337M50H32T-F Cut Tape 21,023 1
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    AFK337M50H32T-F Reel 21,000 200
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    Mouser Electronics AFK337M50H32T-F 1,686
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    TTI AFK337M50H32T-F Reel 11,000 200
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    Master Electronics AFK337M50H32T-F 2,098
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    KEMET Corporation EDK337M025A9PAA

    CAP ALUM 330UF 20% 25V SMD
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    DigiKey () EDK337M025A9PAA Cut Tape 16,804 1
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    EDK337M025A9PAA Digi-Reel 16,804 1
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    EDK337M025A9PAA Reel 16,000 500
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    Mouser Electronics EDK337M025A9PAA 14,383
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    Newark () EDK337M025A9PAA Cut Tape 4,759 10
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    EDK337M025A9PAA Reel 1,000
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    TME EDK337M025A9PAA 14,000
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    Avnet Abacus EDK337M025A9PAA Reel 28 Weeks 14,000
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    KEMET Corporation EDK337M010A9MAA

    CAP ALUM 330UF 20% 10V SMD
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    DigiKey () EDK337M010A9MAA Cut Tape 3,391 1
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    EDK337M010A9MAA Digi-Reel 3,391 1
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    EDK337M010A9MAA Reel 3,000 500
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    Mouser Electronics EDK337M010A9MAA 10,947
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    Newark EDK337M010A9MAA Cut Tape 9,155 10
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    TME EDK337M010A9MAA 14,000
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    Avnet Abacus EDK337M010A9MAA Reel 28 Weeks 14,000
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    KEMET Corporation ESK337M025AH1AA

    CAP ALUM 330UF 20% 25V RADIAL TH
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    DigiKey ESK337M025AH1AA Box 2,125 1
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    Newark ESK337M025AH1AA Bulk 4,000
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    Avnet Abacus ESK337M025AH1AA 25 Weeks 8,000
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    Cornell Dubilier Electronics Inc AFK337M35G24VT-F

    CAP ALUM 330UF 20% 35V SMD
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    DigiKey () AFK337M35G24VT-F Digi-Reel 1,611 1
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    AFK337M35G24VT-F Cut Tape 1,611 1
    • 1 $3.75
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    AFK337M35G24VT-F Reel 1,500 500
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    Newark AFK337M35G24VT-F Bulk 500
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    K337 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    2SK3374 k3374 2SK3374 PDF

    2SK3373

    Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original
    2SK3373 2SK3373 PDF

    2SK3371

    Abstract: 53-common
    Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original
    2SK3371 2SK3371 53-common PDF

    B824 transistor

    Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
    Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    T110/T212 CSR13) MIL-PRF-39003/1 T111/T213 CSR91) MIL-PRF-39003/4 CSR09) MIL-PRF-39003/2 T140/T242 CSR23) B824 transistor a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor PDF

    elko

    Abstract: B43502-D
    Contextual Info: Snap-in-Kondensatoren LL-Typ B 43 502 Hohe Brauchbarkeitsdauer Einsatz bis 85 ˚C Aufbau ● ● ● ● ● ● ● Schaltfest, gepolt Al-Gehäuse, voll isoliert Snap-in-Lötanschlüsse für Selbsthalterung Minuspolkennzeichnung auf Gehäuseoberfläche Minuspol nicht gegen Gehäuse isoliert


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    B43502-D227-M B43502 F/400 elko B43502-D PDF

    K3373

    Abstract: 2SK3373 toshiba marking code transistor
    Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


    Original
    2SK3373 K3373 2SK3373 toshiba marking code transistor PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


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    2SK3374 k3374 2SK3374 PDF

    K277

    Abstract: A475 k337 capacitor a475 D1863 a475 C K187 D336 E476 k227
    Contextual Info: KEMET TANTALUM DIPPED / RADIAL T368 SE R IE S ULTRADIP II' T368 CAPACITOR OUTLINE DRAWING C & D CASES T368 DIMENSIONS — INCHES + MILLIMETERS .100 MAX. (2.54) ,025±.002 (.64±.05) .187±.032 (4.75±.81) •250±.015 (6.351.38) CASE SIZE TMAX WMAX HMAX


    OCR Scan
    120Hz T368C826 006AS T368C107 T368C127 T368C157 T368D187 K277 A475 k337 capacitor a475 D1863 a475 C K187 D336 E476 k227 PDF

    K3371

    Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original
    2SK3371 SC-64 K3371 PDF

    2SK3371

    Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original
    2SK3371 2SK3371 PDF

    transistor a564

    Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
    Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


    Original
    T110/T212 CSR13) MIL-C-39003/1 T111/T213 CSR91) MIL-C-39003/4 CSR09) MIL-C-39003/2 T140/T242 CSR23) transistor a564 a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026 PDF

    2SK3373

    Abstract: K3373 k337
    Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


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    2SK3373 2SK3373 K3373 k337 PDF

    t3512

    Abstract: capacitor a475 T3B6 A475 k337 a475 C L337 A106 k227 a335
    Contextual Info: KE MET TANTALUM DIPPED I RADIAL Tnfifl SERIES U L1HAÜ IP II T368 C A P A C IT O R O U T LIN E DRAW ING C & D C A SES T368 D IM EN SIO N S — IN C H ES ♦ M IL L IM E T E R S .100 MAX. <2.54) oat. oo2 (Ä 4 L0 3 I >r 107t.O32 CASE SIZ E TIAAX WMAX HMAX


    OCR Scan
    T3680626 T368C 006AS T368C127 T368C157 T3880187Q T366D227 t3512 capacitor a475 T3B6 A475 k337 a475 C L337 A106 k227 a335 PDF

    DMK2307-000

    Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
    Contextual Info: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier


    OCR Scan
    AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 DMK2307-000 DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226 PDF

    TANTALUM DIPPED / RADIAL - POLAR

    Abstract: T351-4C 2/48VDC
    Contextual Info: TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive


    Original
    PDF

    K3371

    Abstract: 2SK3371 2SK3371,K3371
    Contextual Info: K3371 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOS V K3371 ○ スイッチングレギュレータ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 0.95 MAX. 0.6 ± 0.15 絶対最大定格 (Ta = 25°C) 項 目 記 号 定


    Original
    2SK3371 SC-64 K3371 2SK3371 2SK3371,K3371 PDF

    k3374

    Abstract: 2SK3374
    Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    2SK3374 k3374 2SK3374 PDF

    a564 transistor

    Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
    Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


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    C-7301 C-7301/7303 a564 transistor a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K PDF

    a564 transistor

    Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
    Contextual Info: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive


    Original
    035AS a564 transistor transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor PDF

    Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)


    Original
    2SK3373 PDF

    K3371

    Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


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    2SK3371 K3371 PDF

    TANTALUM capacitor 685 35K

    Abstract: 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X
    Contextual Info: TANTALUM DIPPED / RADIAL — POLAR KEMET PERFORMANCE CHARACTERISTICS • CAPACITANCE/VOLTAGE RANGE: T35X/T39X: 0.1-680µF, 3-50 Volts. T36X: 0.1-330µF, 6-50 Volts. • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10%


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    T35X/T39X: 035AS TANTALUM capacitor 685 35K 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X PDF

    a564 transistor

    Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
    Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


    Original
    PDF

    k2862

    Abstract: k3354
    Contextual Info: EBAlpha GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Noise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancement Mixers X Passivated Planar Construction for Reliability Description Alpha’s series of gallium arsenide Schottky barrier


    OCR Scan
    PDF