K337 Search Results

k3374

Abstract: 2SK3374
Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK3373

Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3371

Abstract: 53-common
Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

elko

Abstract: B43502-D
Contextual Info: Snap-in-Kondensatoren LL-Typ B 43 502 Hohe Brauchbarkeitsdauer Einsatz bis 85 ˚C Aufbau ● ● ● ● ● ● ● Schaltfest, gepolt Al-Gehäuse, voll isoliert Snap-in-Lötanschlüsse für Selbsthalterung Minuspolkennzeichnung auf Gehäuseoberfläche Minuspol nicht gegen Gehäuse isoliert

K3373

Abstract: 2SK3373 toshiba marking code transistor
Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

k3374

Abstract: 2SK3374
Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •

K277

Abstract: A475 k337 capacitor a475 D1863 a475 C K187 D336 E476 k227
Contextual Info: KEMET TANTALUM DIPPED / RADIAL T368 SE R IE S ULTRADIP II' T368 CAPACITOR OUTLINE DRAWING C & D CASES T368 DIMENSIONS — INCHES + MILLIMETERS .100 MAX. (2.54) ,025±.002 (.64±.05) .187±.032 (4.75±.81) •250±.015 (6.351.38) CASE SIZE TMAX WMAX HMAX

K3371

Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3371

Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

transistor a564

Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

2SK3373

Abstract: K3373 k337
Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

t3512

Abstract: capacitor a475 T3B6 A475 k337 a475 C L337 A106 k227 a335
Contextual Info: KE MET TANTALUM DIPPED I RADIAL Tnfifl SERIES U L1HAÜ IP II T368 C A P A C IT O R O U T LIN E DRAW ING C & D C A SES T368 D IM EN SIO N S — IN C H ES ♦ M IL L IM E T E R S .100 MAX. <2.54) oat. oo2 (Ä 4 L0 3 I >r 107t.O32 CASE SIZ E TIAAX WMAX HMAX

DMK2307-000

Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
Contextual Info: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier

TANTALUM DIPPED / RADIAL - POLAR

Abstract: T351-4C 2/48VDC
Contextual Info: TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive

K3371

Abstract: 2SK3371 2SK3371,K3371
Contextual Info: K3371 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOS V K3371 ○ スイッチングレギュレータ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 0.95 MAX. 0.6 ± 0.15 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

k3374

Abstract: 2SK3374
Contextual Info: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

a564 transistor

Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

a564 transistor

Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
Contextual Info: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive

Contextual Info: K3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

K3371

Contextual Info: K3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

TANTALUM capacitor 685 35K

Abstract: 685 35K MIL-STD-127 T36X KEMET T355 capacitor a475 T350 f5653 RS-468 T35X
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR KEMET PERFORMANCE CHARACTERISTICS • CAPACITANCE/VOLTAGE RANGE: T35X/T39X: 0.1-680µF, 3-50 Volts. T36X: 0.1-330µF, 6-50 Volts. • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10%

a564 transistor

Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

k2862

Abstract: k3354
Contextual Info: EBAlpha GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Noise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancement Mixers X Passivated Planar Construction for Reliability Description Alpha’s series of gallium arsenide Schottky barrier