K304 Search Results

K304-18

Abstract: 2N5668-70 2N3966 2N4416-16A 2N5555 K305-18 MPF102 MPF108 MPF112 PN4416
Contextual Info: K304-18 K305-18 n-channel JFETs designed fo r B . Siliconix Performance Curves NH See Section 5 • V H F /U H F A m p lifie rs BEN EFITS ■ O s c illa to rs • Characterized for Operation at 100 and 400 M Hz • ■ M ix e r s Low Noise N F = 1.7 dB Typical at 100 MHz

stereo plug 3.5mm

Abstract: k3047 K3050 plug 3.5mm thread K305M plug 3.5mm stereo 3.5mm plug 2.5mm phone plug K305N K304D
Contextual Info: Phone Plug K3040 K3041 2.5mm SUBMINIATURE STEREO PLUG 3.5mm MINIATURE STEREO PLUG K3046 K300E K305A 2.5mm SUBMINIATURE MONO PLUG 1/4" MONO PLUG K3047(K3050) 2.5mm SUBMINIATURE STEREO PLUG K304A 3.5mm MINIATURE MONO PLUG K305B 1/4" STEREO PLUG K304B 3.5mm MINIATURE STEREO PLUG

K3003

Abstract: K3050 smd K3050 K3003 transistor k3005 K3007 Vermason brushes K3001 K3040
Contextual Info: Vermason Bin 22 Page 1 of 1 Product Information No: PIS 071F Issue No 4 Date: January 2001 Approved by Conductive brushes Vermason Code K3001 K3003 K3005 K3007 K3040 K3050 K3051 Description Soft, round, 6mm dia Hard, flat, 12mm wide Hard, flat, 25mm wide Hard, flat, 50mm wide

K305-18

Abstract: k305 K304 K304-18 K3041 7500f k3051
Contextual Info: K304-18 K305-18 n-channel JFETs designed fo r B . Siliconix Performance Curves NH See Section 5 • VH F/UH F A m plifiers ■ O scillato rs ■ M ixers B E N E F IT S • Characterized for Operation at 100 and 400 MHz • Low Noise N F = 1.7 dB Typical at 100 MHz

K3003

Abstract: smd K3050 K3050
Contextual Info: Product Information Page 1 of 1 Issue No 5 No: PIS 071 Date : 03 April 2002 Approved by: CONDUCTIVE BRUSHES Code K30. Vermason Code K3001 K3003 K3005 K3007 K3040 K3050 K3051 Description Soft, round, 6mm dia Hard, flat, 12mm wide Hard, flat, 25mm wide Hard, flat, 50mm wide

k301 transistor

Abstract: K304 K301 K302 transistor SMD mark
Contextual Info: Photocoupler K301 • K302 • K304 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in a 8-pin mini-flat SMD package.

ASPA911

Abstract: APR852 G2988 KE214 k794 K304 JAA-002
Contextual Info: I N D E X '1 * " n 'Tfl Vi 11 " -, - w r - r - i -wrT r - - , v - The Brand That Means What It Says. of Qotifly* For over 45 years, Antenna Specialists has supplied quality communications antennas to two-way radio users the world over. More than 7 million of these

KE214

Contextual Info: RG-58/U, PRO-FLEX and PRO-FLEX PLUS Coaxial Cable Assemblies K -303M 10 10 17 K-303T KAV303M K -301M K-301T u> 52 PRO-FLEX cable, one N male, one TNC male 17 5.2 PRO-FLEX cable, one N male, one TNC male It 4.6 46 Ï0 PRO-FLEX PLUS cable, one mini-UHF male on cable, one TNC male loose

AJ314

Abstract: usb joystick circuit diagram intel 945 crb VIP 22 A CS130 RC5 Infrared 38b A216 SC2200UFH-300 SC3200 DOC2000
Contextual Info: Geode SC2200 Thin Client On a Chip General Description The Geode™ SC2200 Thin Client On a Chip device is a member of the National Semiconductor IA Information Appliance On a Chip family of fully integrated x86 system chips. The Geode SC2200 includes:

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

ASPD910T

Abstract: K304 ASPSD911 ASP-912 fender Power Convertibles ASPD915
Contextual Info: CELLULAR MOBILE ANTENNAS Elevated-Feed-Point High-tech, 3 dB Gain Antennas Models ASPD910 Series • ASPSD911 ASPSD912 Series • ASPD915 Antenna Mounting Options ASPD910 Series Complete 3/4 inch hole mount antenna including 17 ft 5.2 m cable and connector.

mpf102 equivalent

Abstract: MPF102 JFET MPF102 y parameters 2N4416-16A equivalent mpf102 U1994 2N5668-70 MPF112 2N4416-16A 2N5555
Contextual Info: NH n-channel JFET GATE ALSO BACKSIDE CONTACT H d e s ig n e d fo r . . . S ilic o n ix • V H F /U H F Amplifier* BENEFITS: • Oscillators • Low Noise NF - 3 dB Typical @ 400 MHz • Wideband High fffj/Cjss Ratio ■ Mixers ■ Low Input Capacitance High Speed

MPF102

Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
Contextual Info: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed

k3047

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed

diode T25-4

Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

Marking c9 SOT23-5

Abstract: TSH310IDT
Contextual Info: TSH310 400µA High-Speed Operational Amplifier PRELIMINARY DATA • ■ ■ ■ ■ ■ Pin Connections top view Low quiescent current: 400µA Bandwidth: 120MHz (Gain=2) Slew rate: 115V/µs Specified on 1kΩ Input noise: 7.5nV/√Hz Tested on 5V power supply

k3047

Abstract: 2SK3047
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ

Contextual Info: Geode SC1200/SC1201 Set-Top Box On a Chip General Description The Geode™ SC1200/SC1201 Set-Top Box On a Chip device is a member of the National Semiconductor IA Information Appliance on a Chip family of fully integrated x86 system chips. The Geode SC1200/SC1201 includes:

Contextual Info: Geode SC1200/SC1201 Set-Top Box On a Chip General Description The Geode™ SC1200/SC1201 Set-Top Box On a Chip device is a member of the National Semiconductor IA Information Appliance on a Chip family of fully integrated x86 system chips. The Geode SC1200/SC1201 includes:

capacitor PMR 202 DM

Contextual Info: Geode SC1200/SC1201 Set-Top Box On a Chip General Description The Geode™ SC1200/SC1201 Set-Top Box On a Chip device is a member of the National Semiconductor IA Information Appliance on a Chip family of fully integrated x86 system chips. The Geode SC1200/SC1201 includes:

Contextual Info: TSH310 400µA High-Speed Operational Amplifier Pin Connections top view • OptimWattTM device featuring ultra-low consumption, 2mW, and low quiescent current, 400µA ■ Bandwidth: 120MHz (Gain=2) ■ Slew rate: 115V/µs ■ Specified on 1kΩ ■ Input noise: 7.5nV/√Hz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed

mpf102 equivalent

Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
Contextual Info: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz