K260 Search Results

ignitor xenon

Abstract: xenon ignitor SIDAC K240 K105 datasheet transistor transistor k105 K240 K120 30 SIDAC K105 V-I characteristics of SIDAC
Contextual Info: K105 THRU K260 FRONTIER ELECTRONICS CO., LTD. SIDAC 95 – 270 VOLTS FEATURES ! GLASS PASSIVATED JUNCTIONS ! HIGH SURGE CURRENT CAPABILITY ! DO-15 PACKAGE 1.0(25.4) MIN .034(0.9) .028(0.7) APPLICATIONS ! GAS IGNITOR ! XENON IGNITORS ! HIGH VOLTAGE LCMP IGNITORS

K267B

Abstract: K264 K263 K260 k261 k268c K262 k267d 50AMP 50AMP K267C
Contextual Info: Clips K260 K267B COLOR CLIP-SMALL COLOR : BLACK & RED W/VINYL BOOT ALLIGATOR CLIP W/MOLDED HANDLE K261 K268A COLOR CLIP-MEDIUM COLOR : BLACK & RED W/VINYL BOOT IC CLIP MINI TYPE K262 K268B COLOR CLIP-LARGE COLOR : BLACK & RED W/VINYL BOOT IC CLIP (SMALL TYPE)

K2607

Abstract: 2N3904 2N3906 SM02 T-51382D064J-FW-P-AA
Contextual Info: K2607 Specifications and Applications Information 03/04/09 8m Class 2 Lamp DC to AC Inverter Preliminary 8m Class The ERG K2607 8m Class low profile dc to ac inverter is specifically designed to power the Optrex T-51382D064J-FW-P-AA and T-51384L079J-FW-PAA display modules to a moderate brightness level

Contextual Info: K2607 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)

K2607

Contextual Info: Endicott Research Group, Inc. 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com K2607 Specifications and Applications Information Dimming Option valid when the "C" jumper is removed +Vin approx. 5 ms* CCFT Lamp 2 Tube DC to AC Inverter

K2604

Contextual Info: K2604 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)

K2608

Abstract: 2SK2608 2-10P1B
Contextual Info: K2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ K2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)

K2606

Abstract: 2SK2606
Contextual Info: K2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance

Contextual Info: cP r U II13U CT Iir r c i Ï FUJITSU takam isaw a COMPONENT CATALOG SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES • UL, CSA recognized • Extremely small and light weight — Size: 10.0 W x 20.2 (L) x 12.8 (H) mm — W eight: approximately 5.5g

Contextual Info: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func­ tions together with high-speed switch­

Toshiba TLX-1741-C3M LCD display

Abstract: kcb104vg2ca-a43 LQ088H9DR01 TOSHIBA TLX-1741-C3M KCS077VG2EA-A43 LM32P073 tlx-1741-c3m M170EN04 LP104S06-A1 DMF50081N
Contextual Info: LCD Module to ERG Inverter Part Number Cross-Reference Guide LCD Manufacturer Acer Acer AND AND AND AND AND AND AND AND AND AND AND AND AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics

cen 496

Abstract: ST6400 intel ic 741 2811* intel IMC040FLSP IMC040
Contextual Info: in te i SERIES 2 + FLASH MEMORY CARDS 40 MEGABYTES IMC040FLSP • Single Power Supply Operation ■ Automatically Reconfigures for 3.3V and 5V Systems ■ 200 ns Maximum Access Time with 10 MB/S Read Throughput ■ High Performance Random Writes — 0.85 MB/S Sustained Throughput

K2607

Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65
Contextual Info: K2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.)

K2604

Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
Contextual Info: K2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current

thermistor k275

Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series

toshiba K2601

Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
Contextual Info: K2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

toshiba K2601

Abstract: K2601 jeita sc-65 2SK2601
Contextual Info: K2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ K2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)

b82720a2601n040

Contextual Info: Power line chokes Current-compensated ring core double chokes 250 V AC, 0.3 … 2 A, 1.1 … 22 mH, +40 °C Series/Type: B82720A/K Date: October 2008, October 2011 a~í~=pÜÉÉí EPCOS AG 2011. Reproduction, publication and dissemination of this publication, enclosures

toshiba K2601

Abstract: K2601 toshiba transistor k2601
Contextual Info: K2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

K2603

Contextual Info: K2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.)

wakefield 2063

Contextual Info: ZONE REV A B C DESCRIPTION ECO. NO. DATE 1627 1655 1735 10/14/94 11/28/94 4/12/95 INITIAL DRAWING RELEASE CHANGED DWG FROM C SIZE TO B SIZE FORMAT AND CHANGED PART NO. ADDED NOTE 6 & 7: ADDED PART NUMBER ZIF 97000-0010 TO TABLE 2.063 18 EQUAL SPACESe.l00±.005=1.800

K2605

Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
Contextual Info: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current

toshiba K2601

Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
Contextual Info: K2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

PLC ELEVATOR CONTROL

Abstract: plc based automatic car parking system imo jaguar inverters 750 vxm user manual 30KW Inverter Diagram imo jaguar inverters 750 800 kva inverter diagrams wiring diagram slip ring motor jaguar vxm 550 thyristor drive dc motor speed control circuit diagram of keypad door lock system
Contextual Info: HIGH PERFORMANCE AC DRIVES 0.4 - 400kW Year Guarantee Index Caution 2 Features 5/6 Range and Application 7 Other Features 8 Specifications This publication is only to be used as a guide. Please seek the full instruction manual before installation. If in doubt please