K261 Search Results

K267B

Abstract: K264 K263 K260 k261 k268c K262 k267d 50AMP 50AMP K267C
Contextual Info: Clips K260 K267B COLOR CLIP-SMALL COLOR : BLACK & RED W/VINYL BOOT ALLIGATOR CLIP W/MOLDED HANDLE K261 K268A COLOR CLIP-MEDIUM COLOR : BLACK & RED W/VINYL BOOT IC CLIP MINI TYPE K262 K268B COLOR CLIP-LARGE COLOR : BLACK & RED W/VINYL BOOT IC CLIP (SMALL TYPE)

KONY crystal

Abstract: KONY hyosung K26141
Contextual Info: Telex;KONYCO K26141 Phone: Q32 548-661 1 / 4 Fax:(032) 547-5003 ^ reC'Sl0n C 0 ,l- td nchgon 407- 040, Korea 604 Hyosung-dong, Kyoyang-ku SPECIFICATION OF QUARTZ CRYSTAL UNIT CUSTOMER PART NO. MANUDAX-F_ I4 9 S 4 0 0 -2 0 f SPEC NO. 9 5 1 1 -0 5 6 0

Contextual Info: K2616 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)300nØ @V(CBO) (V) (Test Condition)

K2613

Contextual Info: K2613 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)

K2613

Abstract: toshiba k2613 2SK2613
Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K2614

Abstract: 2SK2614 K261
Contextual Info: K2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV K2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance

toshiba k2613

Abstract: K2613 K2613 TOSHIBA 2SK2613
Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
Contextual Info: K2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz* MS2830A-041: 9 kHz to 6 GHz* MS2830A-043: 9 kHz to 13.5 GHz* MS2830A-044: 9 kHz to 26.5 GHz MS2830A-045: 9 kHz to 43 GHz *: See MS2830A-040/041/043 catalog The MS2830A-044/045 Signal Analyzer includes a spectrum analyzer function for measuring up to 325 GHz using an external mixer based

preselector

Contextual Info: Product Brochure MS2690A/MS2691A/MS2692A Signal Analyzer MS2690A: 50 Hz to 6.0 GHz MS2691A: 50 Hz to 13.5 GHz MS2692A: 50 Hz to 26.5 GHz The MS2690A/MS2691A/MS2692A MS269xA Signal Analyzer has the excellent general level accuracy, dynamic range and performance of a high-end spectrum analyzer.

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

Contextual Info: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

k2617

Abstract: IT05191
Contextual Info: K2617LS Ordering number : EN5443B N-Channel Silicon MOSFET K2617LS General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

diode T25-4

Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)

K2617

Abstract: 2SK2617 2SK2617LS ENN5443A
Contextual Info: Ordering number : ENN5443A K2617LS N-Channl Silicon MOSFET K2617LS Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Low Qg. unit : mm 2078C [K2617LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6

toshiba k2613

Abstract: 2SK2613 K2613
Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

toshiba k2613

Abstract: K2613
Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

Contextual Info: K2614 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV K2614 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
Contextual Info: K2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)

2SK2613

Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
Contextual Info: K2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII K2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

GSR 10,8

Abstract: DLL5 BG432 ic 404 BB112 equivalent
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.0 April 2, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 Kb to 4 Mb system gates - 130 MHz internal performance (four LUT levels)

AF125

Abstract: n345 pioneer amplifier an214 diode t25 4 d9 DIODE T25-4 AY102 AF155 AN214 amplifier horizontal driver transistor D155 IC AN214
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)