K 246 TRANSISTOR FET Search Results

Contextual Info: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Contextual Info: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.

2SK3900

Abstract: nec 41-A D1717 2SK3900-ZP MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3900-ZP TO-263 MP-25ZP

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

BF966

Contextual Info: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

NT 407 F MOSFET TRANSISTOR

Abstract: MTP8N50E TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without

transistor MOSFET 924 ON

Abstract: 4892 mosfet 4892 4891 TRANSISTOR AN569 MTP60N06HD
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet HDTM O S E -FE T ™ P o w er Field E ffe c t T ran s is to r MTP60N06HD Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS RDS on = 0.014 OHM

Contextual Info: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

f4316

Abstract: F4319F MGF4319F
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

k 246 transistor fet

Abstract: tp60n06 tp60n06hd ny transistor mosfet
Contextual Info: MOTOROLA O rder this docum ent by M TP60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP60N06HD HDTMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced h ig h -c e ll density HDTMOS pow er FET is

TC-5854

Abstract: 2SK479
Contextual Info: NEC m M O S Field E ffe c t P o w e r T ra n s is to r * = r i\ r x 2SK479 N f - t i ' ^ ' 7 -M O S FET x if f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use > M ^ ”7 - M 0 S F E T T t > t & 2SK479i±, ^ ^ H / P A C K A G E DIMENSIONS

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

k 246 transistor fet

Contextual Info: BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 — 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

RM4T

Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ

8010c

Abstract: EUP8010D TDFN-10 8010-D EUP8010C-JIR1 EUP8010A-JIR1 EUP8010B-JIR1 EUP8010X EUP8010B 200A battery charger
Contextual Info: EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,

Contextual Info: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

k 246 transistor fet

Abstract: transistor motorola 246 6v 100 ohm role AN569 MTP60N06HD transistor MOSFET 924 ON
Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

transistor MOSFET 924 ON

Contextual Info: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS

Contextual Info: MOTOROLA O rder this docum ent by M TB60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS on = 0.014 OHM

TDFN-10

Abstract: 8010b EUP8010A-JIR1 EUP8010B-JIR1 EUP8010C-JIR1 EUP8010X 8010c
Contextual Info: 芯美电子 EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,

JI32

Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
Contextual Info: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS

Contextual Info: D2 PA K BUK9618-55A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

mu24 dc

Abstract: SWT-2
Contextual Info: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration