K 2149 Search Results

Contextual Info: - m . I Â P Â K K ê l O M [F K G M Y O © K ] ie i M80C287 80-BIT CHMOS III NUMERIC PROCESSOR EXTENSION Military High Performance 80-Bit Internal Architecture Directly Extends CPU’s Instruction Set to Trigonometric, Logarithmic, Exponential, and Arithmetic

TSOJ-54

Abstract: IBM0364404CT3A-370 2798j
Contextual Info: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: -360, CL=3 fc K ! C lo c k F r e q u e n c y tc K I C lo c k C y c le tA C I C l o c k A c c e s s T i m e 1

k 2057

Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Contextual Info: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805

C09L

Contextual Info: NM24C03L/C05L/C09L/C17L gg National MiM Semiconductor NM24C03L/C05L/C09L/C17L 2 K -/4 K -/8 K -/16K-Bit Serial EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The NM24C03L/C05L/C09L/C17L devices are 2048/ 4096/8192/16,834 bits, respectively, of CMOS non-volatile

Contextual Info: IBM0364804C IBM0364164C IBM0364404C IBM03644B4C Preliminary 64Mb Synchronous DRAM Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: ! | i fc K i C lo c k F r e q u e n c y I tc K -80, CL=3 j -322, CL=3 j -10, CL=3 | U n i t s §

Contextual Info: Tape on Reel Packaging Packaging unit: 300 pcs V e r p a c k t in G u r t v e r p a c k u n g 4.15 VerpQckungsEinhEit; 300 S t ü c k co CT'" 32.5 A bs pu lr ic ht unq - Reel off Direction L n1 1fS Leiterplatten-Layout / PCB-Layout =

Yd 2149

Contextual Info: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64M b S yn ch ro n o u s DRAM - Die R evision A • Programmable Wrap Sequence: Sequential or Features Interleave • High Performance: i fc K i C lo c k F re q u e n c y : tc i< i C l o c k C y c l e • U c

k2038

Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)

Contextual Info: Verpackt in Gurtverpackung - Tape on Reel Packaging Verpacljungseinheit: 300 Stuck - Packaging unit: 300 pcs 32.5 Abspulrichtunq - Reel off Direction 4 ni Leiterplatten-Layout / PCB-Layout ~ j ~ ~(j)~ ~(j)~ Information; k|)~ ~(j)~ ~(j)~ -(j^ ^j)~ ~(j)~ ~(j)~ ~(j)~ ~(j^ k|)~ ~(j)~ ~^ i

Contextual Info: IBM 0364404 C IBM 0364804 C IBM 0364164 C I =¥= = = = ’= P relim inary 64M b S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -80 I i -10 CL=3 i I fcK ! C lo c k F re q u e n c y 1 1 2 5 I t;K C lo c k C ycle

Contextual Info: 5,85 V e r p a c k t in G u r t v e r p a c k u n g 4,6 V e rp ac k u n gs e in h eit: 2 4 0 Stück y-tr Tape an Reel Packaging - Packaging unit: 24-0 pcs - 32,5 0,15 A b s pu lric htunq 4 - Reel o ff Direction q1 16 \ / \ J :L / J iL -$-• Le ite rp la tte n -La yau t /

Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

zener diode 814 lek

Abstract: AD678 AD679 AD679J AD679K AD779
Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

EODB

Abstract: DI 944
Contextual Info: ANALOG DEVICES □ FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode) Straight Binary Data Format (Unipolar Mode)

Contextual Info: 4,15 \ _ I ' T Tape on Reel Packaging V e r p a c k t in G u r tv e rp a c k u n g - Verpacljungseinheit: 4 2 0 Stück - Packaging unit• 420 pcs CO m ' — 32,5 Abspuirichtunq - Reel o ff Direction Le ite rp la tte n -La yo u t / P C B -Layaut Information

Contextual Info: 10 9 8 7 F NOTES 1 OOOG/'J-Jl NUMBER OF CONNECTORS : IO O O PC S/R EEL 2. U - K x - ^ S a LEAD TAPE LENGTH 20PCS.MIN- E '7 7 'x - A K » 9 I ^IlVTtCO TOP TAPE BONDED PART.(EMPTY IS tH U S lq ] 1. PULL OUT DIRECTION E I y/ E REEL (^ 9 0 TAIL PART (EMPTY)

74AC11151

Abstract: 1 of 8 selector TI010 54AC11151 D3348
Contextual Info: 54AC11151, 74AC11151 1 OF 8 DATA SELECTORS/MULTIPLEXERS TI0105— D3348, JUNE 1989— REVISED JANUARY 1990 5 4A C 11 1 51 . . . J P A C K A G E 7 4 A C 1 1151 . . . D O R N P A C K A G E • 8-Line to 1-Line Multiplexers can Perform as: Boolean Function Generators, Parallelto-Serial Converters, Data Source Selectors

Contextual Info: 4,15 s_ f T Tape on Reel Packaging V e r p a c k t in G u r tv e rp a c k u n g - Verpacljungseinheit: 4 2 0 Stück - Packaging unit• 420 pcs / CO i_ n ” u - 32,5 Abspuirichtunq - Reel o ff Direction Le ite rp la tte n -La yo u t / P C B -Layaut

Contextual Info: • 4'15 . \ _ ? V e r p a c k t in G u r t v e r p a c k u n g - V e rp ack un gse inh ei t: 4 2 0 St ück - Tape on Reel Packaging Packaging unit: 4 20 pcs / V oo i_ n IUI - 32,5 Abspulrichtunq L Reel off Direction - n1 1h Leiterplatten-Layout / PCB-Layout

16-Blt

Abstract: b7ah
Contextual Info: O K I Semiconductor MSM531632C : - 1,048,576-Word x 16-BH or 2,097,152-Word x 8-Bit Low-Voltage Mask ROM ' D E S C R IP T IO N w„e,d °“ o o , Ï "d5P* Ï > CM<? M“ k ROM lhat ca" ' ' “ “ “ »'y betweu, 1,048576- 2,097,152-w ord x 8-bit configurations. The MSM531632C operates on a single 3 0 V or

26c512

Abstract: 28C512
Contextual Info: iwixie UUU3 0UUUUffD\n=SirU U— M X26C512 S I 2 K - B IT IB 4 K X 8 ] C M O S M U L T IP L E -T IM E - P R O G R /V IV /IIV /IA B I- E R O M FEATURES • • • • • • • Operating current: 30mA Standby current: TOOjiA 100 minimum erase/program cycles

Contextual Info: Tape an Reel Packaging - Packaging unit: 300 pcs - V e r p a c k t in G u r t v e r p a c k u n g 4 .1 5 V e rp Q c ku n gse in h eit: 300 Stück co r-' 32,5 A b s pu lric htunq - 4 Reel a ff Direction al • [ " _ -(j)- Leiterplatten-Layout / PCB-Layout 1_

Contextual Info: SUPPLEMENT Am29LV800B Known Good Wafer 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2 Note: This supplement contains information on the Am29LV800B in Known Good Wafer form. Refer to the Am29LV800B standard datasheet (publication 21490) for full electrical specifications.

Contextual Info: 5,85 4,6 y-*cr d V e r p a c k t in G u r tv e rp a c k u n g Tape on R e e l Packaging Verpackungsein heit : 2 4 0 Stück Packaging unit.• 2 4 0 p cs L 32,5 0,15 A b s p iiric h t u n q - R e e l o ff D irection L Le ite rp la tte n -La yo u t / 1P. PC B -Layout