K 151 TRANSISTOR Search Results

Contextual Info: FM21L16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: SANKEN ELEC TR IC CO LTD S5E T> 7110741 0000103 151 H S A K J Silicon NPN Triple Diffused Planar ☆High Speed Switching Transistor 2SC4140 Application Exampt« : • Outline Drawing 2 - - MT-100IT03P Switching Regulator and General Purpose Electrical Characteristics

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

transistor b143

Abstract: 6DI20MS-050
Contextual Info: 6DI2OMS-O5O 20 a • O utline D ra w ing s POWER TRANSISTOR MODULE F e a tu re s ’• • hFE*'i i^ '- ' High DC Current Gain • High speed sw itching • 7'J —tM U K l*3/SE Including Free W heeling Diode Insulated Type • A p p lic a tio n s 1 Power Switching

transister

Abstract: LE1A
Contextual Info: ETN35-O3O 300 a POWER TRANSISTOR MODULE ’ F e a tu re s • *n$L High Current High DC Current Gain • Hfe • Non Insulated Type ‘ A p p lic a tio n s • 'v T 's 'f High Power Switching Uninterruptible Power Supply • DC -t — DC Motor Controls Welding Machines

Contextual Info: 2D I 150M-050 150 a Ä ± / < 7 - ie ^ a . - ; u : Outline Drawings POWER TRANSISTOR MODULE Features • f i S h FE H igh D C Current Gain • H igh Speed Sw itching : Applications • iF L ffl'fV / i —9 General Purpose Inverter • Uninterruptible Power Sup ply

20JF

Contextual Info: E T L 8 1 - O 5 O O 0 0 A i Outline Drawings POWER TRANSISTOR MODULE Features • 71; — 1; 's $ I • ASO n c l u d i n g Free Wheel Excellent Safe Operating Area • JfejiJfi Insulated Type : Applications • 4 " j *f- > 9 • AC Power Switching AC M otor Controls

Contextual Info: ETM36-O3O 200a £ ± / « 7 — : O utline D raw ing s POWER TRANSISTOR MODULE F e a tu re s \ High Current • h F E *,ig n High DC Current Gain <> £ Non Insulated T yp e p u i Uk mmi wmm 2-» »V/ IW | i| : Applications High Power Switching “T¿r Uninterruptible Power Supply

ETG81-O5OA

Abstract: TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151
Contextual Info: ETG81-O5OA 30a : Outline Drawings — )V POWER TRANSISTOR MODULE F e a tu re s • 7 l) — x) K rtffll Including Free W heeling Diode • hFE*'rfl5^N High DC Current Gain Insulated Type IffliÊ ’ A p p lic a tio n s > 9 Power S w itching • AC i — 9 V M

151S5

Abstract: I51i 2DI75D-050A
Contextual Info: 2DI75D-050A 75a POWER TRANSISTOR MODULE : Features • 7 y — = f— K rtM • hFEA^Bv.' • *1 1 » Including Free Wheeling Diode High DC Current Gain Insulated Type : Applications "j + 's? • High Power Switching • AC ^ —9 MW A C M otor Controls • DC i — 9WM

IAEJE

Abstract: 6di30z
Contextual Info: 6DI30Z-120 30A / <7 - & D . — JU outi ine Drawings • POWER TRANSISTOR MODULE H _ 14 «Q 1 4 .4 4 . -, y : F e a tu re s • ?Ü i/± • 7')- O J j •üIeü High Voltage yy 4 * - sjw u > • A S O A 'lix L ' k % M k, i k iK J ■ «jt Including Free W heeling Diode

Contextual Info: 1 D I 2 O O Z - 1 O O 200a ">£ : Outline Drawings POWER TRANSISTOR MODULE .2$. — , i6 M ounting ho'« _jfl 5 : F e a tu re s • S liE E H igh V o lta g e » 7 ‘J —4 *4 ij > ? ’ $ -i i[ — K|*3J& • A S O iW & L ' • If e iiifi In c lu d in g Free W h e e lin g D iode

50BO

Abstract: sje transistor
Contextual Info: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter

Contextual Info: ETN31-O55 200A : Outline Drawings POWER TRANSISTOR MODULE : Features • H ig h C u rre n t • hFE H ig h D C C u rre n t G ain o n In s u la te d T yp e : A p p lic a tio n s • H ig h P o w e r S w it c h in g • U n in te rru p tib le P o w e r S u p p ly

LG tv

Contextual Info: 2 D 1 I 5 O Z - 1 O O i 5 0 A D.— Jl" , ± / ' ï r7 — l i W ' + ï i : Outline Drawings POWER TRANSISTOR MODULE : Features • SWEE High Voltage • 7 'J — j f î 'f '} > * ? -f + — K r tiK • ASO Including Free W heeling Diode Excellent Safe Operating Area

Contextual Info: 1DI5OH-O55 50a ✓ \ 7 — : Outline Drawings POWER TRANSISTOR MODULE ; F e a tu re s • Ü 6 IÎŒ H ig h V o lta g e • 7 1; —j J v f • A S O * ''/ £ v . ' • ÎêÎStîfê ' J Kf t ï K In c lu d in g Free W h e e lin g D io d e E x c e lle n t S afe O p e ra tin g A rea

Contextual Info: 6DI3OB-O5O 30a ï ±/<7— /u : O utline D raw ing s POWER TRANSISTOR MODULE »3 H _| i j 1 I U 1 12 , 11 11 • 7 'J — 1.1 — fl m U ' s ? ¥ 4 + — Kr t f f i l • hFEA''üiL' • ÎÊSfeïfi f- U Vj / • ^ J l : ^ F e a tu r e s = = l- < I ncl udi ng Free W h e e lin g D iode

HF 331 transistor

Abstract: BLF221
Contextual Info: bbsaiai Philips Semiconductors doerbib 3 7 ^ apx Product specification HF/VHF power MOS transistor BLF221 b^E T> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

ED36

Abstract: ED-36 B400A
Contextual Info: 6 D 1100 IVI "050 loo a : O utline D ra w in g s s < T7 - Y = 7 > i > 7 . 9 :£ i > 3 . - ) \ s POWER TRANSISTOR MODULE 17 6 l i 14 6 17 I y i- 0 5 . 5 -1 / : F e a tu re s • h F E A ''flL ' H ig h DC C urrent Gain • x - f ’r i - v y x f c f — H ig h speed s w itc h in g

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

uc3807

Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures