JPAD10 Search Results

EPAD50

Abstract: TO-106 case to106 diode pico-amp to106 case to-106 JPAD100 JPAD200 JPAD50 JPAD500
Contextual Info: . BENEFITS • Low Cost TO-92 See Seçtion 7 JPAD500 ABSOLUTE M A XIM U M RATINGS 25°C JPAD200 • High Impedance Diode Switching ■ High Dynamic Range Log Amps ■ High Isolation Protection Circuits JPAD100 designed for . B Silicon ix JPAD50 low-leakaqe

Contextual Info: Low Leakage Pico Amp Diodes calodjc CO RPO RATIO N JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 FEATURES DESCRIPTION • Low L e a k a g e .5 pA JPAD5

Contextual Info: Low Leakage Pico Amp Diodes LLC JPAD5 / JPAD10 / JPAD20 / JPAD50 / JPAD100 / JPAD200 SSTPAD5 / SSTPAD10 / SSTPAD20 / SSTPAD50 / SSTPAD100 / SSTPAD200 DESCRIPTION FEATURES Leakage . . . . . . . . . . . . . . . . . . . . . . . . 5 pA JPAD5 • Low • High Breakdown Voltage . . . . . . . . . . . . . . . -60 V typical

Contextual Info: JPAD100 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD100 The JPAD100 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD100 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current leakage must be

JPAD5

Abstract: SSTPAD5 SSTPAD50 5007 JPAD10 JPAD100 JPAD20 JPAD200 JPAD50 JPAD5-200
Contextual Info: Low Leakage Pico Amp Diodes LLC JPAD5 / JPAD10 / JPAD20 / JPAD50 / JPAD100 / JPAD200 SSTPAD5 / SSTPAD10 / SSTPAD20 / SSTPAD50 / SSTPAD100 / SSTPAD200 FEATURES DESCRIPTION Leakage . . . . . . . . . . . . . . . . . . . . . . . . 5 pA JPAD5 • Low • High Breakdown Voltage . . . . . . . . . . . . . . . -60 V typical

SSTPAD50

Abstract: SSTPAD100 5007 sot T11 JPAD10 JPAD100 JPAD20 JPAD200 JPAD50 JPAD5-200
Contextual Info: Low Leakage Pico Amp Diodes CORPORATION JPAD5 / JPAD10 / JPAD20 / JPAD50 / JPAD100 / JPAD200 SSTPAD5 / SSTPAD10 / SSTPAD20 / SSTPAD50 / SSTPAD100 / SSTPAD200 FEATURES DESCRIPTION Leakage . . . . . . . . . . . . . . . . . . . . . . . . 5 pA JPAD5 • Low

Contextual Info: JPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD10 The JPAD10 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD10 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current leakage must be

Contextual Info: JPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD10 The JPAD10 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD10 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current leakage must be

T05 sot-23

Abstract: sot T11 PAD200 MARKING T20 SOT23 VPAD10 SSTPAD20 SSTPAD50 SSTPAD5-200 CR marking sot-23 SOT-23 marking 352
Contextual Info: Low Leakage Pico Amp Diodes calocflc C O RPO RATIO N JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 FEATURES DESCRIPTION • Low L e a k a g e .5 pA JPAD5

226a surface mount diode

Abstract: TO-226A JPAD50 TO-92 CALOGIC D 92 M 03 DIODE JPAD20 JPAD200 XJPAD10 2411 sot23 XJPAD20
Contextual Info: JPAD5 /JPAD10 1JPAD20 /JPAD100 /JPAD20C CALOGIC CORP Low Leakage Pico Amp Diodes 10 4 4 3 5 2 4flE D 0000424 • CGC caloric CORPORATION V JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 DESCRIPTIO N FEATURES • Low Leakage . 5 pA JPAD5

Contextual Info: JPAD100 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD100 The JPAD100 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD100 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current leakage must be

TO-92 CALOGIC

Contextual Info: JPAD5 / JPAD10 / JPAD20 / JPAD50 / JPAD100 / JPAD20G CALOGIC CORP 4flE D • 1044325 0000424 1 ■ C G C Low Leakage Pico Amp Diodes JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 ' r o , ‘ ^ FEATURES DESCRIPTION • Low Leakage . 5 pA JPAD5

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

J201 spice

Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Contextual Info: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

"DUAL N-Channel JFET"

Abstract: ultra low igss pA J176 equivalent
Contextual Info: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW

jfet transistor 2n4391

Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
Contextual Info: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
Contextual Info: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5

Current Regulator Diode

Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.