JESD22B102D Search Results
JESD22B102D Datasheets Context Search
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Contextual Info: S1A - S1M CREAT BY ART Pb 1.0AMP Surface Mount Rectifiers SMA/DO-214AC RoHS COMPLIANCE Features For surface mounted application Glass passivated chip junction Low forward voltage drop High current capability Easy pick and place High surge current capability |
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sma/do-214acaec-q101j-std-002bjesd22-b102d+4 | |
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Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : |
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sa170ca2002/95/ec2002/96/ecdo-204ac+1 | |
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Contextual Info: MBR F,B 735 thru MBR(F,B)760 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability |
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o-220acito-220acj-std-020co-263ab+3 | |
wk 2 94v-0
Abstract: yd 803 rohs cn/A/U 237 BG SMAJ188CA vishay smaj5.0 sma smaj5.0 data
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smaj188cado-214acj-std-020c2002/95/ec+7 | |
tgl200Contextual Info: TGL41-6.8 thru TGL41-200A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only |
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tgl41-6tgl41-200aj-std-020c2002/95/ec+3 | |
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Contextual Info: SMBG5.0 thru SMBG188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional |
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smbg188caj-std-020c2002/95/ec2002/96/ec+1 | |
g 6005
Abstract: GBPC6005 GBPC610 JESD22-B102D J-STD-002B gbpc601
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gbpc6005gbpc610e542142002/95/ec+6 | |
1.5SMC400CA
Abstract: 6v8a TS 4140 1.5SMC
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e23053110x1000sdo-214abrs-481+4 | |
DF10 GENERAL SEMICONDUCTOR
Abstract: Vishay DF10 datasheet Vishay/General semiconductors DF10 datasheet DF04M df02m DF005 DF005M DF01M DF10M JESD22-B102D
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df005mdf10me542142002/95/ec+10 | |
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Contextual Info: GBL005 thru GBL10 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL Recognition file number E54214 • Ideal for printed circuit boards • High surge current capability ~ ~ • Typical IR less than 0.1 µA • High case dielectric strength |
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gbl005gbl10e542142002/95/ec+2 | |
30KPA48CA
Abstract: 30KPA 30KPA36A diode A106 30KPA28A 30KPA30A 30KPA33A P600 30KPA198CA 30KPA33CA
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0000w30kpa1000se230531+13 | |
SMAJ Littelfuse
Abstract: SMAJ24CA SM A106 SMAJ15CA SMAJ10A SMAJ11A SMAJ12A SMAJ13A SMAJ TVS SMAJ marking
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e2305311000sdo-214acrs-481+10 | |
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Contextual Info: SS13M - SS16M CREAT BY ART 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency Meet MSL level 1, per J-STD-020D, |
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ss13mss16mj-std-020d22-a111+5 | |
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Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2 |
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2n7002dwmil-std-883jesd22-b102-djesd22-a102-c+5 | |
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Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2 |
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20h90ct20h100cto-220abito-220ab+6 | |
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Contextual Info: SRP600A thru SRP600K Vishay General Semiconductor Fast Switching Fast Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 800 V IFSM 300 A trr 100 ns, 150 ns, 200 ns VF 1.3 V IR 10 µA Tj max. 150 °C Case Style P600 Features Mechanical Data |
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srp600asrp600kul-94v-0j-std-002b+2 | |
V60100CContextual Info: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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v60100co-220ab2002/95/ec2002/96/ec+1 | |
JESD22-B102D
Abstract: J-STD-002B VSIB15A60 VSIB15A20
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vsib15a20vsib15a80e542142002/95/ec+5 | |
GSIB10A60
Abstract: JESD22-B102D J-STD-002B
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gsib10a20gsib10a80ul-94v-0j-std-002b+4 | |
TVS SMB 15CA
Abstract: P6SMB TVS 15CA SMB P6SMB27A P6SMB12AAUTO P6SMB13AAUTO P6SMB15AAUTO 22AA P6SMB33CA-AU
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e230531do-214aa12mm/13rs-481+9 | |
5ke39ca
Abstract: 5ke36ca DIODES Inc DO201 marking 5ke47ca 1.5ke 1,5ke 15KEXX
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do-2011000srs-296edm-0016+7 | |
a106 diode
Abstract: TVS 15CA 1.5SMC4 1.5SMC 47AA 33cA 27AA
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e230531do-214ab16mm/13rs-481+7 | |
BY396P
Abstract: BY397P BY398P BY399P JESD22-B102D J-STD-002B
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by396pby399pdo-201adul-94v-0+5 | |
UF 5407
Abstract: 5406 JESD22-B102D J-STD-002B UF5400 UF5404 UF5405 UF5408 5405
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uf5400uf5408do-201adul-94v-0+8 | |