22AA Search Results
22AA Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 22AAWC310400 | Essentra Components | CBL CLIP C-TYPE BLACK ADHESIVE | Original | 75.6KB | |||
| 22AAWC390490 | Essentra Components | CBL CLIP C-TYPE BLACK ADHESIVE | Original | 74.56KB | |||
| 22AAWC500600 | Essentra Components | CBL CLIP C-TYPE BLACK ADJ ADH | Original | 73.87KB | |||
| 22AAWC830930 | Essentra Components | CBL CLIP C-TYPE BLACK ADJ ADH | Original | 54.52KB |
22AA Price and Stock
CIT Relay & Switch RW2722AACDouble Pole Rocker Switch - (On)-Off-(On) Switch Function - Black Housing and Actuator - .250 Quick Connect Solder Lug |
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RW2722AAC | 400 |
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Carling Technologies EA1-B0-16-660-22A-ABSingle-pole hydraulic-magnetic circuit breaker rated for 60A with 50/60Hz long time delay and 1/4-20 stud terminals. |
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EA1-B0-16-660-22A-AB |
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EA1-B0-16-660-22A-AB | 1 |
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TE Connectivity 7022AAY1Industrial Electropneumatic Timing Relay - 2FormC - DPDT - .1 to 1 sec Off Delay - 120VAC 60 Hz / 110VAC 50Hz MOQ Reduction |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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7022AAY1 |
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7022AAY1 | 4 |
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Carling Technologies VP166-B22AA-4212NV-SERIES ILLUMINATED PLUG |
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VP166-B22AA-4212N |
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VP166-B22AA-4212N | 1 |
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Carling Technologies VP1HN-B22AA-BE42JV-SERIES ILLUMINATED PLUG |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP1HN-B22AA-BE42J |
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VP1HN-B22AA-BE42J | 1 |
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22AA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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PWB 1038
Abstract: SERVICE MANUAL PS3 09AA 4165-3926-01 gear 36t 22AA 31AA 08AA 9384 datasheets r 1004 transistor
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4100e/gn/w750045-001aapplicable31-2710-21pwb 1038+9 | |
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Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) |
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Contextual Info: SSM6J503NU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM6J503NU パワーマネジメントスイッチ 単位: mm • • 1.5V 駆動です オン抵抗が低い: RDS ON = 89.6 mΩ (最大) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (最大) (@VGS = -1.8 V) |
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ssm6j503nu | |
2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
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OCR Scan |
tmp95cs5416-bittmp95cs54f100-pin+5 | |
TVS SMB 15CA
Abstract: P6SMB TVS 15CA SMB P6SMB27A P6SMB12AAUTO P6SMB13AAUTO P6SMB15AAUTO 22AA P6SMB33CA-AU
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e230531do-214aa12mm/13rs-481+9 | |
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Contextual Info: 512K X 8 EEPROM m o l a t e ME8512SC-15/20 Issue 12 . : March 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 524,288x 8 CMOS EEPROM Features Very Fast Access Times of 150/200 ns JEDEC 4M EEPROM Standard 32 pin DIL footprint Operating Power 350 mW max |
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me8512sc-15/20mil-std-883aoa16 | |
a106 diode
Abstract: TVS 15CA 1.5SMC4 1.5SMC 47AA 33cA 27AA
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e230531do-214ab16mm/13rs-481+7 | |
mmi "tiw PROM" programming
Abstract: MMI PLE5P8 63S481 63S081 22AA PLE9P4 63s281 PLE9R8 PLE10P4 PLE11P8
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OCR Scan |
512p8f18p0863s481fecp65+15 | |
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Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients |
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aec-q101jesd201aec-61000-4-2do-214aa+2 | |
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Contextual Info: CDS4006 MagnetoResistive Current Sensor IPN = 6 A Data sheet The CDS4000 current sensor family is designed for highly dynamic electronic measurement of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The MagnetoResistive technology enables an excellent dynamic response without the hysteresis |
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cds4006cds4000cds4006abc | |
C5478
Abstract: dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec
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c5332mch66rvsd10rvsd11+13 | |
BC327 C327
Abstract: r4571 diagram of epson t13 printer Wistron Corporation BC246 49LF004A-33 2N7002 VISHAY bc264 cross reference circuit diagram of epson t13 printer G913C-U
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950813ygt48t0148t0202227-sd+16 | |
AVR block diagram
Abstract: Programmers ATMEL AT29C1024 ATSTK594 3562A ATMEL 7800 AT29C1024 A800H 16 bit avr sram 6800 AT40K40
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at94k10at40k40at29c1024avr block diagram+7 | |
Fuse 1 600 F KLK-D
Abstract: KLKD.200 klkd 30 KLKD004 klkd4 klkd20 KLKD03 klkd 20 KLKD10 KLKD.100T
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10x38vac/600e339112e10480+11 | |
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C-SZU35
Abstract: Sussex Semiconductor 9ge7 5KP10 5KP10A 5KP11 5KP11A 5KP12 5KP12A 5KP13A
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015in009in95pb/5snc-szu35+9 | |
AK 061
Abstract: Sussex Semiconductor P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75
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ak 061sussex semiconductorp4ke51ap4ke56+6 | |
power invertor
Abstract: RQMB040 RQ 4 ABB V-250 dc to ac invertor rk 12 e RK732 RQ04 12 vdc to 220 ac invertor abb combiflex
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OCR Scan |
26-ac22b-ads-721power invertor+9 | |
IBM 9910-140
Abstract: UPS 9910-080 9910-140 9910-080 ibm 9910-080 UPS APC 2248 22AA 9910 plug UPS APC CIRCUIT
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as/400eibm 9910-140ups 9910-0809910-140+7 | |
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Contextual Info: SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J502NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) |
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Contextual Info: DRAWING MADE T H IS DRAWING COPYRIGHT RESERVED. AMP IN TH IRD ANGLE IS UN PUBLISH ED. 19 BY AMP P R O JE C T IO N RELEASED INCORPORATED,HARR I S B U R G , P A . PRODUCTS MAY BE COVERED BY ,19 FOR P U B L I C A T I O N U.S. AND FOREIGN ALL IN T ERN AT IO N AL |
OCR Scan |
ar2029ar2491ad-4171/horae/ssnv026d/dsjc03/de+2 | |
27AEContextual Info: DRAWING MADE IN THIRD A NGL E THIS DRAWING IS UNPUBLISHED. COPYRIGHT RESERVED. 19 AMP BY AMP PROJECTION RELEASED FOR PUBLICATION INCORPORATED,HARR ISBURG, PA . U .S . PRODUCTS MAY BE COVERED BY AND FOREIGN NOD ,1 9 ALL IN T ERN AT IO N AL PATENTS RIGHTS |
OCR Scan |
60-maxar2029ar24912-22-aa+4 | |
MA 8920
Abstract: 5KP25 KA 7015 SZU16 P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE75
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ma 89205kp25ka 7015szu16+6 | |
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Contextual Info: SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J501NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V) |
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ssm6j501nu | |
ssm6j503nuContextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) |
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ssm6j503nu | |