JE 720 TRANSISTOR Search Results

transistor B 722

Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722
Contextual Info: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc

Amplifier with transistor BC548

Abstract: pin diagram of transistor BC548 BC548 pin diagram pin diagram transistor BC547 BC547 collector characteristic curve transistor BC548 pin diagram of bc548 BC548 B 001 BC548 npn pin diagram of transistor BC558
Contextual Info: BC546 - BC548 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max

pin diagram of transistor BC548

Abstract: BC547 collector characteristic curve pin diagram transistor BC547 BC548 pin diagram transistor bc547 features pin diagram of bc548 Amplifier with transistor BC548 BC548 BC546-BC548 BC548 TRANSISTOR
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 hM h H TO-92 Mechanical Data_ • • • • Case: TO-92, Plastic

uPA77HA

Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,

2SC3734

Abstract: odv marking
Contextual Info: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m

BC548 pin diagram

Abstract: pin diagram transistor BC547 BC547 collector characteristic curve BC546-BC548 pin diagram of transistor BC548 bc547 pnp BC548 npn pin diagram of transistor BC558 BC548 ,BC558 DS21612
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max A 4.45 4.70 4.70 B 4.46 C 12.7 — Mechanical Data_

Contextual Info: FZ 360 R 17 KF Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V 360 A V CES Thermal properties RthJC DC, pro Baustein / per module 0,035 RthCK pro Baustein / per module

Contextual Info: FZ 360 R 17 KF Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,035 °CAW RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte VcES Maximum rated values 1700 V 360 A RthCK le 0,025 °C/W

k3017

Abstract: 2SK3017
Contextual Info: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm i c Q + nc: Low Drain-Source ON Resistance

Contextual Info: TOSHIBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS U n it in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Ex cellen t Sw itch in g Tim es : tf = 0.5 /us (M ax.) (l£ = 1.2 A )

7B5A

Abstract: 2SC5356
Contextual Info: TO SH IBA 2SC5356 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC5356 SWITCHING REGULATOR APPLICATIONS U n it in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Excellent Sw itching Times : tf = 0.5 /¿s (M ax.) (l£ = 1.2 A )

2n871

Abstract: 2n 719a 2n720
Contextual Info: typ es 2M6SI, tmm. 7.nm. iwimk. 2N720A. 2N870, 2N871, 2MIÌIS -.»ftslBSÖ ¿KS&8.Ì N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V IS E D M A R C H 1973 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

Contextual Info: International I R Rectifier pd-916si IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • U ltra F a s t sw itching s p e e d o ptim ized for operating V freq u en cies 8 to 4 0 k H z in hard sw itching, 2 0 0 k H z ces = 600V in reso nan t m ode soft switching

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

2SD1491

Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
Contextual Info: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,

MRC 453

Contextual Info: am sm u t R F P r o je c ts M * ic r o s e m i 140CommerceDrive Montgomeryville, PA18936-1913 Tel: 215 631-9840 ^ , SD 1429 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS C U S S C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN COMMON EMITTER

transistor g23 mosfet

Contextual Info: P D -9.1146 bitemational Ë g i Rectifier IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)

2SB75

Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SC2718

Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Contextual Info: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS

TRANSISTOR FF75

Abstract: 1BW TRANSISTOR
Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module

PRW 200

Abstract: transistor VCE 1000V CMK2100 1bw transistor
Contextual Info: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module

Contextual Info: 7 =3 ? - 3 / F 300 R 12 KF EU P EC 52E D • 3 ll 0 3 2 tì 7 000Q 254 Sb2 HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,062 °C/W Ttansistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte