JCPA Search Results

transformateur

Abstract: bornera redresseur philips tubes borne FILTRE SECTEUR transformateur de puissance 2X40 rs tube 2x350Veff
Contextual Info: _ _ f. Le tube redresseur E Z 4 Le tube EZ 4 est un tube redresseur biplaque à chauffage indi­ rect étudié pour des postes de grande puissance et pour de petits amplifica­ teurs alimentés par le secteur alterna­ tif. Il peut alimenter facilement un poste

TUBE EL3

Abstract: m6411 tube ek2 ampli schema condensateur electrolytique SCHEMA chauffage par induction philips miniwatt philips miniwatt ez miniwatt cy2 2X40
Contextual Info: BULLETIN T E C H N IQ U E EDITE PAR LE BUREAU D’ETUDES DE LA S.A. PHILIPS 2, cite PARADIS, PARIS. TEL TAITÔ. 69-80 99-80. MAI-JUILLET 1936 l a m p e s RECEPTRICES "MINI WATT" TUBES AM PLI­ FICATEURS T U B E S REDRESSEURS TUBES A RAYONS CATHODIQUES T U

Q729

Abstract: 16-DRAM Q67100-Q727
Contextual Info: SIE M E N S 256 K X 16-Bit Dynamic RAM Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJ-60/-70/-80 HYB 514171BJL-60/-70/-80 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

c 4977 transistor

Contextual Info: WJ-PA3 / SMPA3 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +24.5 dBm TYP. @ +15Vdc ♦ HIGH THIRD ORDER INTERCEPT POINT: +34 dBm (TYP.) ♦ MEDIUM GAIN: 14.5 dB (TYP.) ♦ LOW VSWR: < 1.5:1 (TYP.) Outline Drawings

Contextual Info: ±0. 05 1C 3 J ‘3*0'1 J CD m 3. 3 ± o . 1 1 T c ¿0*05 1< CM N CPITCH 'NOT ACCUMULATED .TOLERANCE ) 0 0 . 8 ±0-05 œ I 1* TI I I I I 1 I TI I I 1 I I I TI I I I I I I I I .o i i • n I II J V k A j UI UI i :I H -1# f I I * ^ DETAIL ^ S i « ij mm

transistor schottky model spice

Contextual Info: V T C INC IDE D l^ a a ^ S T O VJ800 “ 0001Ö0S 0 T-H2-21 ANALOG MASTER CHIP FAMILY USER S G U ID E Release 2.2 CONTENTS 1. INTRODUCTION 1.1 Preface. 2-5 1.2 Bipolar-CMOS Comparison. 2-5

Contextual Info: WJ-PA2/ SMPA2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +25 dBm TYP. HIGH EFFICIENCY WIDE POWER SUPPLY RANGE: +5 TO +24 VOLTS +24 V O utline D raw ings PA2 Specifications * 0.200 (5.08) Guaranteed

Contextual Info: 2 9 .0 NOTES; 1. 2. i* PRODUCT S P E C , i 1 C S—5 3 0 2 A P P L I C A B E L CONTACT P / N TA0 CONTACT. 17STS0Ci&#39;2Q-*16AW S> : 1 . 2. 3. a s = f Z' & £? b S ¿ # r*- ~ r - =3 v- ? >• : i 7 5 J5 o -: :c * 2 o - ^ s a w g : 1 7 5 14 9- f K ' 2S - * 2 2 A WSJ

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.

jeida dram 88 pin

Abstract: jcpa
Contextual Info: IBM11J8320CL 8M x 32 5.0V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: -70 I rac RAS Access Time 70ns tcAC CAS Access Time 25ns *AA Access Time From Address 42ns I rc Cycle Time 130ns tpc Fast Page Mode Cycle Time 45ns Single 5.0V, ± 0.25V Power Supply

Contextual Info: " H Y li H D ft! « FAST PAGE MODE, X4/X8 DRAM Read Cycle 457 «HYUNDAI Early Write Cycle Note; 9 OE : Don’t cara '9 8 DRAM DATA BOOK tOEH CD ar ai ~o CD C o o LU o o (S' 4> X -J > :> |C0 < !oc ICO < •o ILU Is jo Read-modify-write Cycle Wwe 0 0 0 - 3 ( 7 ) ^ 1 - Hi -Z -O

WP-13

Abstract: ta22a DE456 1A039
Contextual Info: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: i I -J . 01 CD <n ±Ot SEP. A ~ cf ksïï - o DC K 2: NO. 554-030 UJ fi WOJECT WAS 85-25090 fli *1 §l s* s S M 3 SECT. A - A -J * u M !ôc oo"t ss~2 Ills -;ï ; A y-noV9*fr A $ ï l A: i Af f r ¿ o í l i ¿ 'ü 'it . N O TE ; A. Nö . A. A scores.ímjst o n s e a l ríñC

MAS-5010

Abstract: 53368 62212 ETS500 119185
Contextual Info: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA

tw 2867

Contextual Info: WJ-PA12-1 / SMPA12-1 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. @+12 VOLTS2 ♦ WIDE BANDWIDTH: 10-1200 MHz ♦ LOW VSWR: < 1.5:1 (TYP.) ♦ WIDE POWER SUPPLY RANGE: +5 TO +14 VOLTS Outline Drawings

5118160BSJ

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15

TIL 815

Abstract: EFSH E5EW sharp LQ0
Contextual Info: SHARP SPEC Ho. | M D G O 8 8 0 1 ISSUE: Aug. 7 1996 To ; Preliminary S P Product Type E C I F I C A T 8 M bit P S R A M I O N S 524,238xl6bit L H 6 P 8 2 Z 1 ïodel fio. (LH6P82Z1) EiThis specifications contains 25 Pages including the cover and appendix.