DS16F95QML
Abstract: ETS500 5962R0923561VZA LM4050WG2 LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q
Contextual Info: 1 Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference Kirby Kruckmeyer, Member, IEEE, Elisa Morozumi, Member, IEEE, Robert Eddy, Thang Trinh, Tom Santiago and Pierre Maillard, Student Member, IEEE Abstract—National Semiconductor’s 100 krad Si low dose
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lm4050qmllm4050wg2com/opf/ds/ds16f95ds16f95+13rs-485mil-std-883june18/downloads/milspec/docs/mil-std883/std883ds16f95qmlets5005962r0923561vzalm4050wg2.5rlqvtexas ldrldr specificationtm1019radiation assured deviceslm4050q
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specification of ldr
Abstract: LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019
Contextual Info: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
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lm2941ph/std883mil/downloads/milspec/smd/00501specification of ldr+9ldr specificationsensitivity of ldr5962r9166702vyaets500texas ldrlm2941wgrlqmlvldr internal diagramldr resistortm1019
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transistor 30054
Abstract: IC 6601 GH 12v 100 amp battery load tester CAPACITOR chip murata mtbf mbr530 lot date code panasonic 0603 resistor 17000E transistor x1 3003 543e GRM1885C1H470JA01B
Contextual Info: Solved by SP6691 TM Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LEDs @ 25mA ■ Drives up to 8 LEDs @ 20mA ■ High Output Voltage: Up to 30V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V
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sp6691350mv350ma1/16w+11800-digi-keytransistor 30054ic 6601 gh12v 100 amp battery load testercapacitor chip murata mtbfmbr530lot date code panasonic 0603 resistor17000etransistor x1 3003543egrm1885c1h470ja01b
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MAS-5010
Abstract: 53368 62212 ETS500 119185
Contextual Info: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA
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rm2012xw-qmlv6354ireqr2012baem16383e+8jcpac0107h4381g019e-128mas-50105336862212ets500119185
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Hi-rel 8936
Abstract: 45288 2167.1 MAS50 MAS-5010 1764 689 74845 8195 82583 8533
Contextual Info: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA
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rm2012xw-qmlv6354ireqr2012baem16372s1+12jcpac0107h4385k019hi-rel 8936452882167.1mas50mas-50101764 689748458195825838533
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