JC SOT23 Search Results

sot23 theta jc value

Abstract: DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825
Contextual Info: Maxim > App Notes > 1-Wire DEVICES GENERAL ENGINEERING TOPICS TEMPERATURE SENSORS and THERMAL MANAGEMENT MEASUREMENT CIRCUITS Keywords: Theta JA, Theta JC, theta-ja, theta-jc, self heating, thermal dissipation, heat dissipation, power dissipation, thermal resistance, junction to case, junction to ambient, temperature, sensor, temperature

marking JC

Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Contextual Info: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

1D SOT 23-6

Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
Contextual Info: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style

BAL74

Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
Contextual Info: SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 – FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA ! 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 – JC BAR74 – JB 0.1µF  +11V Trr2 2 1 0.2µF BAL74

marking JC diode

Contextual Info: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation

code jc

Abstract: marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23
Contextual Info: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation

Contextual Info: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code

Contextual Info: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*

PAL 007 B

Abstract: PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501
Contextual Info: P h ilip s Sem iconductors Video Products O b je c t lv ^ p e c if jc a t jo n TDA8501 PAL/NTSC encoder FEA TU RES G EN ERAL DESCRIPTION • Two input stages: R , G , B and - R -Y , -(B -Y ), Y with multiplexing • Chrominance processing, highly integrated, includes

Contextual Info: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range

CV 1

Contextual Info: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ ^ ^ M M B T 5401LT 1 TR A N SISTO R PNP 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm: 0.3 W (Tamb=25"C) C ollecto r current ICM: -0 .6 A 2.4 Collector-base voltage « 13 ► V ( b r jc b o :-1 6 0 V

Contextual Info: LM3410 www.ti.com SNVS541F – OCTOBER 2007 – REVISED AUGUST 2010 LM3410/LM3410Q 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation Check for Samples: LM3410 FEATURES 1 • • • • • 2 • • • • Space Saving SOT23-5 & 6-LLP Package

e1 marking

Abstract: FS0102DL 1CGK
Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

1CGK

Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

TS16949

Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Contextual Info: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP

DIODES 11W

Contextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve

E4 sot23-5

Abstract: sot23-5 package marking E4 marking B3 sot23-5 VM SOT23-5 MARKING TS462CN-TS462CD-TS462CPT TS461-TS461-TS464
Contextual Info: TS461 TS462 TS464 OUTPUT RAIL TO RAIL OPERATIONAL AMPLIFIERS • HIGH DYNAMIC FEATURES ■ LARGE OUTPUT SWING ±2.4V @ VCC = ±2.5V ■ LOW NOISE LEVEL : 4nV/VHz" ■ LOW DISTORTION : 0.003% ■ OPERATING RANGE : 2.7V to 12V ■ AVAILABLE IN SOT23-5 MICROPACKAGE

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

Contextual Info: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

MMBR911LT1

Abstract: MMBR911MLT1
Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package