JC SOT23 Search Results
JC SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
JC SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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sot23 theta jc value
Abstract: DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825
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DS18B20: DS18B20-PAR: DS18S20: DS18S20-PAR: DS600: DS620: DS75LV: AN3930, APP3930, Appnote3930, sot23 theta jc value DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825 | |
marking JC
Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
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BAV23S OT-23 marking JC BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23 | |
1D SOT 23-6
Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
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OCR Scan |
OT-23 MMBTA06 O-236 PZTA06 O-261 NZT6714 NZT6715 NZT6717 1D SOT 23-6 MMBTA06 MMBTA42 MMBTA43 PZTA42 | |
BAL74
Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
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BAL74 BAR74 100ns 100mA BAL74 SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF | |
marking JC diodeContextual Info: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation |
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1SV3401 OT-23 marking JC diode | |
code jc
Abstract: marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23
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1SV3401 OT-23 code jc marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23 | |
Contextual Info: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code |
OCR Scan |
VP2106 VP2110 VP2106N3 O-236AB* VP2110K1 VP2106ND VP2110ND OT-23: -100V VP2106/VP2110 | |
Contextual Info: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1* |
OCR Scan |
MMBT4401LT1* OT-23 O-236AB) | |
PAL 007 B
Abstract: PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501
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OCR Scan |
TDA8501 MKA455 MKA456 MKA457 7110A2b 0D77DM7 711002b 0D77D4B PAL 007 B PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501 | |
Contextual Info: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range |
OCR Scan |
OT-23 -100m -10mA 30MHz S9015LT1 S9015LT1 | |
CV 1Contextual Info: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ ^ ^ M M B T 5401LT 1 TR A N SISTO R PNP 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm: 0.3 W (Tamb=25"C) C ollecto r current ICM: -0 .6 A 2.4 Collector-base voltage « 13 ► V ( b r jc b o :-1 6 0 V |
OCR Scan |
OT-23 5401LT -100w -500m -50mA 100MHz MMBT5401LT1 MMBT5401LT1 CV 1 | |
Contextual Info: LM3410 www.ti.com SNVS541F – OCTOBER 2007 – REVISED AUGUST 2010 LM3410/LM3410Q 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation Check for Samples: LM3410 FEATURES 1 • • • • • 2 • • • • Space Saving SOT23-5 & 6-LLP Package |
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LM3410 SNVS541F LM3410/LM3410Q 525kHz/1 OT23-5 LM3410-Y) LM3410-X) LM3410Q AEC-Q100 | |
e1 marking
Abstract: FS0102DL 1CGK
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2002/95/EC 2002/96/EC J-STD-020, OT23-3L. MIL-STD-750 J-STD-002 JESD22-B102. FS01ibutors fs01lsg Dec-11 e1 marking FS0102DL 1CGK | |
1CGKContextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES Glass/passivated die junctions Low current SCR Low thermal resistance High surge current capability Low forward voltage drop |
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2002/95/EC 2002/96/EC J-STD-020, OT23-3L. MIL-STD-750 J-STD-002 JESD22-B102. FS01ibutors fs01lsg Dec-11 1CGK | |
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TS16949
Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
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ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6 | |
DIODES 11WContextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve |
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ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W | |
E4 sot23-5
Abstract: sot23-5 package marking E4 marking B3 sot23-5 VM SOT23-5 MARKING TS462CN-TS462CD-TS462CPT TS461-TS461-TS464
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OCR Scan |
TS461 TS462 TS464 OT23-5 TS46x TS461/2/4are E4 sot23-5 sot23-5 package marking E4 marking B3 sot23-5 VM SOT23-5 MARKING TS462CN-TS462CD-TS462CPT TS461-TS461-TS464 | |
Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com |
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MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1 | |
Contextual Info: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-3.0dB@500MHz Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com |
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BFR92ALT1 BFR92ALT1 500MHz | |
Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package |
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MMBR5179LT1 MMBR5179LT1 200MHz OT-23 | |
MMBR911LT1
Abstract: MMBR911MLT1
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MMBR911MLT1 MMBR911MLT1 MMBR911LT1 MMBR911LT1 | |
Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com |
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MMBR911LT1 MMBR911LT1 MMBR911MLT1 | |
Contextual Info: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com |
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BFR92ALT1 BFR92ALT1 500MHz | |
Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-4.5dB@200MHz Low cost SOT23 package |
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MMBR5179LT1 MMBR5179LT1 200MHz |