S9015LT1 Search Results

2SC2786

Abstract: S9015LT1
Contextual Info: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25

S9014L

Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW

Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23

BCW60B

Abstract: BCW60BLT1 S9014LT1 S9015LT1
Contextual Info: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25

Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current -0.1 A ICM: Collector-base voltage -50 V V(BR)CBO:

Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: W(Tamb=25℃) 0.2 Collector current ICM: -0.1 A -50 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range

sot-23 Marking M6

Abstract: m6 marking transistor sot-23 S9015LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.1

Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

S9015LT1

Abstract: S9015 S9015M
Contextual Info: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

S9015RLT1

Contextual Info: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R -45 -0.1 -40 -100 -5.0 -100 -40 -3.0 WEITRON http://www.weitron.com.tw S9015SLT1=15S 1/ -0.1 u -0.1 u 28-Apr-2011 S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)

2SC2786

Abstract: S9015LT1
Contextual Info: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25

S9015LT1

Contextual Info: 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Contextual Info: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range

sot-23 Marking M6

Abstract: "device marking" "device marking" M6 m6 marking transistor sot-23 AV9015LT1 S9015LT1
Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors AV9015LT1 TRANSISTOR PNP SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range