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    S9014L Search Results

    S9014L Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    S9014LT1
    Weitron NPN General Purpose Transistors Original PDF 304.04KB 3
    S9014LT1
    Unknown SOT-23 Plastic-Encapsulate Transistors Scan PDF 1.22MB 2

    S9014L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S9014L

    Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
    Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW


    Original
    s9014lt1s9015lt1100ma225mw+6ot-23062in300uss9014lsot-23 marking o7s9014lt1-l PDF

    Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23


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    s9015lt1s9014lt1-100maot-23+3-10ma062in300us PDF

    transistors marking HJ

    Abstract: s9014lt1 S9014LT1 J6
    Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .COLLECTOR FEATURES Power dissipation Pcm : 0.2 W (Tamb=25°C) Collector current 2 .4 ICM: 0.1 1.3 A Collector-base voltage ss O) CT> Csi o EE V(BR)CBo: m 50V Operating and storage junction temperature range


    OCR Scan
    ot-23s9014lt1cut-30mhztransistors marking hj+1s9014lt1 j6 PDF

    MARKING E1 SOT23 TRANSISTOR

    Abstract: S9014LT1 J6 S9014LT1
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR( NPN ) 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.2 W(Tamb=25℃) Collector current ICM : 0.1 A


    Original
    ot-23ot--23s9014lt1037tpy+5950tpy550ref022refmarking e1 sot23 transistors9014lt1 j6 PDF

    Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original
    ot-23s9014lt1s9015lt130mhz PDF

    S9014RLT1

    Contextual Info: S9014LT1 3 1 2 SOT-23 V CEO Value 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S 0.1 S9014TLT1=14T 45 50 100 100 40 3.0 WEITRON http://www.weitron.com.tw 1/ 0.1 u 0.1 u 28-Apr-2011 S9014LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued)


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    s9014lt1ot-23s9014qlt1s9014rlt1+3s9014slt1s9014tlt128-apr-2011 PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    od-1231n4148w1n4448w1n5711w+161n6263wb0520lwb0530wb0540wb5817wb5818wtransistor s8550 2tyschottky barrier sot-23 marking s4sk 8050skl4 sot-23d882 to-92br s8050bq d882transistor d882 datasheets8050 equivalentpcr100-6 PDF

    BCW60B

    Abstract: BCW60BLT1 S9014LT1 S9015LT1
    Contextual Info: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25


    Original
    bcw60blt1s9015lt1100ma225mw+3062ins9014lt1bcw60b PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


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    huaxing20od-1231n4148w1n4448w+151n5711w1n6263wb0520lwb0530wb0540wy2 transistortransistor s8550 2tybq d882transistor bc547 bk 045transistor d882 datasheetz1 transistortransistor mark aqys8050 equivalentk596-bsot 89 d882 PDF

    9014LT1

    Abstract: 9014L
    Contextual Info: M C C SOT-23 P la stic-E n c ap su la te T ra n s is to rs ^ S 9014L T1 TR A N SIS TO R N P N 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES à. o; Power dissipation Pcm : 0.2 W (Tamb=25"C) Collector current IC M : 0.1 A C ollector-base voltage V{B R )C B o: 50V


    OCR Scan
    ot-239014ls9014lt19014lt1 PDF