JANTX 2N6193 Search Results

Contextual Info: TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 561 Devices Qualified Level 2N6193 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current

JANTX 2n6193

Abstract: 2N6193
Contextual Info: TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level 2N6193 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current

2N6193

Abstract: JANTX 2n6193
Contextual Info: TECHNICAL DATA 2N6193 JANTX, JTXV MIL-PRF Processed per MIL-PRF-19500/561 DEVICES QPL PNP MEDIUM-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation

ADC 0803 datasheet

Abstract: 2N6193 JANTX 2n6193 MIL-PRF-19500/561
Contextual Info: TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level 2N6193 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation

Contextual Info: PNP Power Silicon Transistor 2N6193 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/561 • TO-39 TO-205AD Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current

Contextual Info: PNP Power Silicon Transistor 2N6193 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/561 • TO-39 (TO-205AD) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage

Contextual Info: 2N6190 2N6191 2N6192 2N6193* hnasr *n Iso availabc as JAN, JANTX, JANTXV 5 AMPERE M E D IU M POWER PNP S ILIC O N TRANSISTO RS . , . designed for switching and wide band amplifier applications. • Low Collector-Emitter Saturation Voltage — VcE(sat = 1-2 Vdc (Max) @ I q = 5.0 Amp

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N5339

Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
Contextual Info: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —

Contextual Info: 2N6193+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)10

2n6193

Abstract: silicon pnp transistor
Contextual Info: 2N6193 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N6193J

transistor d 571

Abstract: JANTX 2n6193 90VOLTS
Contextual Info: 2N6193 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N6193J

2N6193

Abstract: JANTX 2n6193 2N6193J 2N6193JV 2N6193JX
Contextual Info: 2N6193 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N6193J

2n6193a

Contextual Info: 2N6193A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

2N6193A

Contextual Info: 2N6193A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

2N6193U3

Abstract: 2n5339 jantx 2N5339 JANS JANTX 2n6193 2N5339 2N6193 transistor AS 431 TO metal package aluminum kovar 2N6193 equivalent
Contextual Info: INCH-POUND MIL-PRF-19500/561G 2 May 2009 SUPERSEDING MIL-PRF-19500/561F 29 May 2005 The documentation and process conversion measures necessary to comply with this document shall be completed by 2 August 2009. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

TRANSISTOR SMD MARKING CODE 451

Abstract: 2N6193 2N5339
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

2N6193U3

Abstract: 2N5339 2N6193 MIL-PRF19500 JANTX 2n6193
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 3 April 2001 INCH-POUND MIL-PRF-19500/561D 3 January 2001 SUPERSEDING MIL-PRF-19500/561C 28 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

Diode 1N41

Abstract: PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617
Contextual Info: Hi-Rel Components from Aeroflex / Metelics Diodes Switching Zener TC Zener Current Regulators Transistors Small Signal Medium & High Power Darlingtons Silicon Controlled Rectifiers JANHC and JANKC Chips DLA Certified JAN–JANS Short Form Catalog August 9, 2012

2n5339 jantx

Abstract: 2N5339 2N6193 smd transistor marking BL
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 2 January 2011. INCH-POUND MIL-PRF-19500/560K 2 October 2010 SUPERSEDING MIL-PRF-19500/560J 2 May 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

PNP TO-39

Abstract: 2N6191
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 pr D* ix 1.3@2.5/.25 6 60 >20@2.5/3 1.3@2.5/.25 6 60 1 20-200@. 1/15 3@.025/.0025 4 10* 350 1 20-200@.l/15 3@.025/.0025 4 10‘ 2N5094 400 1 20-200@.l/15 3@.025/.0025 4 10' 2N5096 450 1 20-200@.l/15

Transistor 2N5093

Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)

2n6190

Contextual Info: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S VOLTS T0-205 1*0-5 111I PEAK *C AMPS min/max hFE LU bvceo O > > DEVICE TYPE _o < PACKAGE VCE (sat) max VOLTS !C @ *B A A 2N3439* 350 1.0 40-160 .02/ 10.0 0.5 .05 /. 004 2N3440* 250 1.0 40-160 .02/ 10.0