J309 TRANSISTOR Search Results

J310

Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
Contextual Info: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a

6u sot-23

Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

6u sot-23

Abstract: J309 CBVK741B019 F63TNR J310 MMBFJ309 MMBFJ310 PN2222N J309-J310 UA309
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

J310

Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

J310

Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

motorola U310

Abstract: Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet
Contextual Info: MOTOROLA Order this document by J308/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers J308 N–Channel — Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25

symbol transistor BC108

Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS

j310 equivalent

Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3

13000 BR transistor

Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating

vk200 choke

Abstract: j310 j310c variable trimmer MVM010W SM 4151 J308
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF A m plifiers N -C h a n n e l — Depletion J308 J309 J310 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VG S 25 Vdc Forward Gate Current 'G F 10 mAdc

Transistor J310

Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Contextual Info: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

J308

Abstract: MCD217 transistor 309 J309 J310 UBB114 ti j309
Contextual Info: tbS3T31 0D2M012 2 T2 H A P X Prelim inary specification Philips Sem iconductors N-channel silicon field-effect transistors N AUER J308/309/310 PHILIPS/DISCRETE b?E ]> PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

vk200 choke

Abstract: MVM010W MVM010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C

U430

Abstract: IFN5564 IFN5566 U309 VCR2N IFN5565 J308 J309 J310 U308
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-26 F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C

TRANSISTORS 132 GD

Contextual Info: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource V o ltag e V DS 25 Vdc G ate-Source V o ltage V GS 25 Vdc Forw ard Gate C u rrent >GF 10 m A dc Total Device D issipation Cw T a = 25°C Derate above 25°C

j310 replacement

Abstract: BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2N4092 2n4393 replacement bfw11
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION

BSV81

Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION

motorola U310

Abstract: j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310
Contextual Info: MOTOROLA SC { DIODES/OPTOJ 6367255 MOTOROLA SC 34 D iT|t:3b72S5 D IO D E S /O P T O 34C O D B f l O 1! ? 38047 h Q T * i I - IS ' FIELD-EFFECT TRANSISTORS DICE (continued) UC310 DIE NO. UNE SOURCE — DFM145 This die provides performance equal to or better than that of

7.1 Channel audio amplifier

Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_

Contextual Info: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)

motorola U310

Abstract: DFM145 U310 MOTOROLA
Contextual Info: MOT OROL A SC Im 5F |b3t> 7S S 5 0030 047 b í DIODES/OPTO> t 6367255 MOTOROLA SC DIODES/OPTO 3^c 38047 T " 1( FIELD-EFFECT TRANSISTORS DICE (continued) ~ Q 2S~ UC310 DIE NO. LINE SOURCE — DFM145 This die provides performance equal to or better than that of

2n3819 field-effect transistors

Abstract: MPF102 MMBF-5457 bf245b
Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457