J1V0DS00 Search Results

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿XPD29F016L 16M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 2M-WORD BY 8-BIT Description The ^¡PD29F016L is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 16,777,216 bits (2,097,152

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,uPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).

IEU-1372

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿1PD78011H, 78012H, 78013H, 78014H 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N The ¿¿PD78011 H, 78012H, 78013H, and 78014H are the products in the /¿PD78014H subseries w ithin the 78K/0 series. Com pared with the older /¿PD78018F subseries, this subseries reduces the EMI Electro M agnetic Interface noise

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT LCD CONTROLLER/DRIVER WITH ON-CHIP 1/65 DUTY RAM DESCRIPTION The ,uPD16682 is a LCD driver that includes enough RAM capacity to drive full-dot LCD displays. Each chip can drive a full-dot LCD display consisting of up to 132 x 65 dots.

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iP D 4 3 8 2 16 1,4382181,4382321,4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The ,uPD4382161 is a 524,288-word by 16-bit, the ,uPD4382181 is a 524,288-word by 18-bit, the ,uPD4382321 is a

transistor NEC D 586

Abstract: NEC D 586
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 0 8 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The ,uPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿XPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The ^¡PG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2.4G bps ATM SONET FRAMER The ,uPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _¡jP D 4 4 1 6 0 0 4 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The ,uPD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM.

226BH

Abstract: it27
Contextual Info: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT AIPD29F800AL 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT BYTE M O D E /512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD29F800AL is a low-voltage (2.2 to 2.7 V, 2.7 to 3.6 V) flash memory organized as 8,388,608 bits in 19

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 2 6 K 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The ^¡PC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile

Contextual Info: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7241H-1A 4-PIN SOP HIGH ISOLATION VOTAGE 3 750 Vr.m.s. 1-ch Optical Coupled MOS FET DESCRIPTION T he P S 7 2 4 1 H -1 A is a solid s ta te relay con ta in in g G aA s LED s on the light em ittin g sid e (in pu t side) and M O S

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 1 2 8 4 4 1 - A 7 5 , 4 5 1 2 8 8 4 1 - A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ^¡PD45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynam ic random-access

Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿ iP G 1 5 8 T B L, S- BAND SPDT SWITCH DESCRIPTION The ^¡PG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band w ireless application. The device can operate from 500 MHz to 2.5