J112 FET Search Results

Diode r4d

Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
Contextual Info: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

MMBFJ111

Abstract: J111 6R SOT23 J112 TO92
Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

2SJ112

Abstract: 2SJ112-TYPIC j112 fet
Contextual Info: H I T A C H I / í O P T OE LE CT RO NI C S} 73 HITACHI ! .DP IÖLLEC IKUN ICS DE.[LlLllit3SD5 P O D ^ a □ 73C 09948 D • z 3 2S J112 SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 398

PMBFJ111

Contextual Info: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23

Contextual Info: • bbS3=131 002400b TTT « A P X jm J112 b7E T> N APIER P H IL I P S/ D I SC R ET E ;v J113 N - C H A N N E L S IL IC O N F I E L D - E F F E C T T R A N S IS T O R S Symmetrical silicon n-channel junction F E T s in plastic TO-92 envelopes. They are intended for

siliconix - j201

Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
Contextual Info: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,

2N4393

Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
Contextual Info: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and

VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DA

Abstract: VDIP1
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

pn5114

Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N-Channel — Depletion MAXIMUM RATINGS Rating D r a in -G a te Voltage G a te -S o u rc e Voltage Symbol Value Unit VD G -3 5 V dc VG S -3 5 V dc G ate C urrent 'g 50 m Adc Total Device D issipation @ T a = 25°C

J222

Abstract: VNCL2-64Q VNC2-64Q1A
Contextual Info: Future Technology Devices International Ltd. V2DIP1-64 VNCL2-64Q Development Module Datasheet Document Reference No.: FT_000165 Version 1.0 Issue Date: 2010-04-19 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

MMBF4861

Abstract: U1899 marking j112 U1898 TIS75 2N5555 2N4860 PN5434 PN5432 TIS74
Contextual Info: bflE D ' N Channel Continued Device RDS(on) (O ) @ Id (V) (V) M in b S Q 1 1 3 D D D 3 ^ S D 3 fiflfl „„ _„ NATL SE H I C O N » V p @ V D8 lD BV qss (V) Min • (nA) Max Min . (DIS CR ETE ) Ciss Crss ton toff <PF) Max (PF) Max (ns) (ns) Max Max Package

J113

Abstract: J111 J112 600SL
Contextual Info: designed for . S ilic o n ix Performance Curves NC See Section 5 B E N E F IT S Analog Switches • Low Cost • Automated Insertion Package Choppers • Low Insertion Loss ^DS on < 30 i2 (J111) • No Offset or Error Voltages Generated by Closed Switch

FET package TO-71

Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Contextual Info: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25

J1039

Contextual Info: 1300 Henley Court Pullman, WA 99163 509.334.6306 www.digilentinc.com Universal Development Board Reference Manual Revised January 15, 2014 This manual applies to the UDB rev. E Table of Contents Table of Contents . 1

EMI ESS 80 185

Abstract: J181 CM 1241 RS232 DB9 BACKSHELL Lambda Sensor j182 multi turn potentiometer with knob 19-INCH torque settings for sae bolts neptune digital Energy Meter
Contextual Info: OPERATOR MANUAL FOR Document: 83-510-004 Rev C 405 Essex Road, Neptune, NJ 07753 Tel: 732 922-9300 Fax: (732) 922-9334 Web: www.lambda-emi.com i Table of Contents 1. GENERAL INFORMATION . 1-1

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
Contextual Info: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net

mc68hc16z1cfc16

Abstract: 10K SIP Resistor IC3 7805 regulator
Contextual Info: 19-1322; Rev 0; 12/97 68HC16 Module DESIGNATION C1, C2, C3 QTY 3 C4, C5 2 C6, C7 C8 C9 C10–C14 D1 J1 J2 2 1 5 1 1 1 J3 1 J4 JU1 JU2 JU3 JU4 JU5 L1 L2 LED1 R1 1 1 DESCRIPTION 1µF ceramic capacitors 22µF, 25V radial-lead electrolytic capacitors 22pF capacitors

2SK163

Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
Contextual Info: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed