J020 Search Results

CBR10F-010P

Abstract: CBR10F-020P CBR10F-040P CBR10F-J010 CBR10F-J020 CBR10F-J040 CBR25F-010P CBR25F-020P CBR25F-040P CBR35F-020P
Contextual Info: Bridge Rectifiers, Past Recovery Continued 10 lo (AMPS) 25 35 @ TA (°C) @ TC (°C) 100 60 60 60 IFSM (AMPS) 150 300 350 400 Í CASE CASE FP CA,3ECN VRRM (VOLTS) 100 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-01 OP 200 CBR10F-J020 CBR10F-020P CBR25F-020P

FCN-231

Abstract: 2U68
Contextual Info: FCN-234P/235P*-g/e FCN-231J/237J/237P * * * - g /* FCN-231J*-G/ESOLDER-CABLE-SOCKET d im e n s io n s 5.5 0.217 M Note: Applied wire (Ex-Dia:mm) #26 AWQ (Reference) Unit: mm (in.) PART NUMBERS Dimensions No. of Contacts Part Number A B c 20 FCN-231 J020-G/E

J02015A

Abstract: LT4217 J02015 CD6150 0414T
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?ES4 □ 0^41*14 -33r( MOTOROLA T • 110Tb CD6150 (See LT4217) ■ SEMICONDUCTOR TECHNICAL DATA The RF Line UHF P o w er T ran sisto r The J02015A is an internally matched NPN silicon UHF power transistor. Its multicell design allows optim um heat dissipation and operating efficiency. A slotted-grid finger

Contextual Info: Bridge Rectifiers, Past Recovery Continued 10 10 (AMPS) 25 35 @ TA (°C) @ T C (°C) 100 60 60 60 IFSM (AMPS) 150 300 350 400 Hi _] L C A S E FP C A S E CM CA SE VRRM (VOLTS) 100 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-010P 200 CBR10F-J020 CBR10F-020P

CBR10F-010P

Abstract: CBR10F-020P CBR10F-040P CBR10F-060P CBR10F-J010 CBR10F-J020 CBR10F-J040 CBR10F-J060 CBR10F-J080 CBR10F-J100
Contextual Info: Bridge Rectifiers, Fast Recovery Continued IO (AMPS) 10 25 35 o @TA ( C) o @TC ( C) 100 60 60 60 IFSM (AMPS) 150 300 350 400 CASE CASE CM CASE FP VRRM (VOLTS) 100 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-010P 200 CBR10F-J020 CBR10F-020P CBR25F-020P CBR35F-020P

Contextual Info: S t a n d a r d D IN P lu g s , J a c k s & S o c k e ts 7 - 1.40 CN C. DIN Socket Panel-Metal D. DIN Plug E. DIN Jack Configuration Description 3 Pin /zk\ 4 Pin 6 Pin 5 Pin 7 Pin 8 Pin * 45° 180° 210° 180° 240° 270° 270° D J0203P D J0203P S SD 30S N

CBR35F-020P

Abstract: CBR35F-060P CBR10F-010P CBR10F-020P CBR10F-040P CBR10F-060P CBR10F-J010 CBR10F-J020 CBR10F-J040 CBR10F-J060
Contextual Info: Bridge Rectifiers, Fast Recovery Continued IO (AMPS) 10 25 35 o @TA ( C) o @TC ( C) 100 60 60 60 IFSM (AMPS) 150 300 350 400 CASE CASE CM CASE FP VRRM (VOLTS) 100 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-010P 200 CBR10F-J020 CBR10F-020P CBR25F-020P CBR35F-020P

J02015A

Abstract: J02015
Contextual Info: J02015A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI J02015A is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Internal Input Matching Network

Contextual Info: CD6150 See LT4217 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA J02015A The RF Line U H F P o w e r T ra n sisto r The J0 2 0 1 5 A is an in te rn a lly m atched NPN silico n UHF p o w e r tra n sisto r. Its m u ltic e ll design a llo w s o p tim u m heat d issip a tio n and o pe ra tin g efficiency. A s lo tte d -g rid fin g e r

Contextual Info: Bridge Rectifiers, Fast Recovery Continued Io (AMPS) 10 25 35 @ T a (°C) @ T c (° C ) 100 60 60 60 IFSM (AM PS) 150 300 350 400 |g CA SE C A SE CM C A SE FP VRRM (VOLTS) 100 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-010P 200 CBR10F-J020 CBR10F-020P

J02017

Abstract: J0201 440 transistor
Contextual Info: 15E D § bBt.7254 GGfl?20S ñ | MOTOROLA SC MOTOROLA XSTRS/R F SEM3CONDUCTOR TECHNICAL DATA The RF Line J02017 NPN Silicon UHF Power Transistor The J0201 7 is an internally matched N P N silicon UHF power transistor. Its multicell design allows optimum heat dissipation and operating efficiency. A slotted-grid finger

Contextual Info: CC24_ _020N CN24_ J020N_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 FdSt f í& C O V B F y Dual Diode Modules SupBf 20 Amperes/300-600 Volts Description: O U T L IN E ORAWING Powerex Super Fast Recovery Dual Diode Modules are designed

Contextual Info: Bridge R ectifiers, Fast Recovery Continued IO (AMPS) 10 25 35 @ T a (°C) TC (°C) 100 60 60 60 IFSM (AMPS) 150 300 350 400 Jit C A S E CM CA SE C A S E FP VRRM (VOLTS) 109 CBR10F-J010 CBR10F-010P CBR25F-010P CBR35F-010P 200 CBR10F-J020 CBR10F-020P CBR25F-020P

J02020

Contextual Info: Jr Modular Patch Panels & Verteiler Modular Patch Panels & Distributors 1 19" M odular Patch Panels 19" M o d u la i Patch Parieis Leistungsmerkmale: • Geeignet für Datenübertragungen in High-Speed LANs mit Übertragungsraten > 100 Mbit/s. • EMV-Zertifikate nach EN 50081-2 und 50082-2 für den Industriebereich für die geschirmten Ausführungen.

Contextual Info: 1 2 3 4 5 1 + 7,88 A Ø 1,6 ±0.1 A 8,4 ±0.3 CHARACTERISTICS 5,08 ±0.1 PCB LAYOUT MATERIAL Insulator material : LCP Flammability rating : UL94-V0 Colour : Black Contact pin : Brass CuZn Surface of solder tail plating : Tin Plated ENVIRONMENTAL Operating temperature : -40°C up to 105°C

Contextual Info: 1 2 3 4 5 CHARACTERISTICS A + 15,24 1 M 2,50 Ø 1,6 ±0.1 5,08 ±0.1 PCB LAYOUT A MATERIAL Insulator material : LCP Flammability rating : UL94-V0 Colour : Black Contact pin : Brass CuZn Surface of solder tail plating : Tin Plated Flange nut : Brass - M2.5

Contextual Info: 1 2 3 A + 5,2 1 4 Ø 1,40 CHARACTERISTICS A 7,3 ±0.3 MATERIAL Insulator material : LCP Flammability rating : UL94-V0 Colour : Black Contact pin : Brass CuZn Surface of solder tail plating : Tin Plated 3,81 ±0,3 24,25 5 PCB LAYOUT ENVIRONMENTAL Operating temperature : -40°C up to 105°C

Contextual Info: 1 2 3 5 Ø 1,6 ±0,1 5,08 ±0,1 1A + 15,24 4 CHARACTERISTICS M 2,5 7,6 ±0.3 5,08 ±0.1 A MATERIAL Insulator material : LCP Flammability rating : UL94-V0 Colour : Black Contact pin : Brass CuZn Surface of solder tail plating : Tin Plated Flange nut : Brass - M2.5

J020D-STD

Abstract: JEDEC tray dimension JEDEC TRAY 10 X 10 21 x 14 tray
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 46 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

MB8416A-15

Abstract: MB8416A-12L 24LAA tc5517 B8416A-16 MB8416A MB8416A-12/15
Contextual Info: FUJITSU MICROELECTRONICS 7fl D Ë J 37MT7L.2 00033D2 3 | ~ - 3749762 FUJITSU MICROELECTRONICS M O S • M e m 78C 03302 D< T-46-23-12 FU JITSU o r ie s M B 8 4 1 6 A - 1 2 , M B 8 4 1 6 A - 1 2 L , M B 8 4 1 6 A - 1 5 , M B 8 4 1 6 A - 1 5 L CM OS 16,384-Bit

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

Contextual Info: 2 3 4 \f 16.7 en AA CM 26.3) r^ _ 12.3 1 ±0.5 -y ' 1; ^ h ^ ± 0.2 ) (NOTES) _ es. 1 ^ c a ±0.15 1 . ^ J f , 1.6 C P.C.B. THICK N E5 5 , 1 . 6 3 2. 1 ±0 .1 C TOLERANCES, 3. 75 o WL C M 0 U N T ING D I M E N S I O N S FOR P . C . BOARD) ±0.1 > 3.15 H

TJ36-CASS-116U-6/N

Contextual Info: Portable Paperless Recorders A/IN RD-8100 Series MADE IN USA $ 2595 Basic Unit ߜ Up to 8 Channels of Isolated Input ߜ Dot Matrix LCD Screen Display ߜ Accepts Thermocouples, mV, V, mA Inputs and More ߜ Battery or ac Powered ߜ RS-232 Communications Port

4A14H

Abstract: SRN8
Contextual Info: User Manual V850E2/ML4 32 User’s Manual: Hardware 32-bit Single-Chip Microcontroller V850E2/Mx4 microcontrollers PD70F4021 μ PD70F4022 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by