J 2N2484 Search Results

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2484JAN, JTX, JTXV Processed per MIL-S-19500^376 NPN Silicon Small-Signal Transistor CRVSTALOWCS 2BOS Veterans Highway Suite 14 0«sigfv«<j lor g a n e r ii p u rp o s e am plifier a pplications Ronkor Koma. N,y. ii 7 7 t M A XIM U M R ATIN G S

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

2N2483

Abstract: 2N2484 J 2N2484 2N2484 manufacturer FT1215
Contextual Info: - _ PHILIPS In t e r n a t i o n a : 2N2483 2N2484 H SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. These transistors are prim arily intended fo r use in high performance, low-level, low-noise am plifier

2N2484

Abstract: 2N2484 motorola
Contextual Info: 2N2484* M A XIM U M RATINGS Symbol Rating Value Unit C o lle c to r -E m itte r V o lta g e VCEO 60 V dc C o lle c to r-B a s e V o lta g e VCBO 60 Vdc V dc m Adc v EBO 6 .0 C o lle c to r C u rre n t — C o n tin u o u s 'c 50 T o ta l D e v ic e D is s ip a tio n <‘ T / \ = 2 5 °C

2N2484

Abstract: CECC50002-129 J 2N2484
Contextual Info: 2N2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N2484 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Products approved to CECC50002-129 available on request.

2N3680 transistor

Abstract: 2N2642 TE550 2N2920
Contextual Info: TYPE 2N3680 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 2 1 1 6 8 7 , M A R C H 1 97 2 RECOMMENDED FOR D IFFER EN TIA L AMPLIFIERS • Featuring Matching and Tracking Improvements over 2N2453, 2N2642, and 2N2920 • Each Triode Electrically Similar to 2N2484 and 2N930

Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V - 50 mA Features Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 1 1 2 • Linear gain characteristics ■ Hermetic packages

2N2484HR

Abstract: 5201001 Table of smd IC marking codes soc2484hrb AM07818v1 SOC2484
Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V - 50 mA Features Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 1 1 2 • Linear gain characteristics ■ Hermetic packages

2N2484

Abstract: SOT-18 BP317 Transistor 2N2484
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2484 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 01 Philips Semiconductors Product specification NPN general purpose transistor

2n2484 NPN Transistor features

Abstract: 2N2484
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor FEATURES 2N2484 PINNING • Low current max. 50 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 2 base APPLICATIONS 3 collector, connected to the case emitter • General purpose switching and amplification

8VC80

Contextual Info: D fV C f TYPF PACKAGE BVCEO 8VC8 0 BVEBO ICBO Q VCB { V I M IN V M IN IV ) M IN Im A I M AX |V ) 2N2475 2N2476 2N2477 2N2481 2N2483 NPN NPN NPN NPN NPN T O -18 TO -5 TO -5 T O -18 T O -18 6 20 20 15 60 15 60 60 40 60 4 5 5 5 6 50 200 200 50 10 2N2484 2N2501

2n2483

Abstract: 2N2484
Contextual Info: TYPES 2N2483, 2N2484 N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 7 1 0 3 0 0 , S E P T E M B E R 1 9 6 7 FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS • Guaranteed Low-Noise Characteristics at 100 Hz, 1 kHz, and 10 kHz • High V n CEo . . . 60 V Min

inverter ccfl SP 5001 IC INVERTER

Abstract: free transistor equivalent book 2sc 930 dtl transistor kc 2026 ic est 7502 B1027 transistor SD 5024 SLA 5017 850 va inverter schematic diagram 845N
Contextual Info: INTEGRATED CIRCUITS CATALOG Notes on This First Edition T his first e d itio n of T I ’s In te g ra te d C irc u its c atalo g co n ta in s currently published data sheets covering SO LID C IR C U IT semi­ conductor networks. As new data sheets are published, they will be dis­

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPQ2369

Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
Contextual Info: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.

MPS5771

Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage

BC237

Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

MPS6520 equivalent

Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE