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    IXTQ69N30P Search Results

    IXTQ69N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTQ69N30P
    		IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 105.58KB 5
    SF Impression Pixel

    IXTQ69N30P Price and Stock

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    Littelfuse Inc IXTQ69N30P

    MOSFET N-CH 300V 69A TO3P
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    DigiKey IXTQ69N30P Tube 1
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    Verical IXTQ69N30P 300 7
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    Quest Components IXTQ69N30P 240
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    IXYS Corporation IXTQ69N30PM

    MOSFET N-CH 300V 25A TO3PFP
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    DigiKey IXTQ69N30PM Tube 300
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    TTI IXTQ69N30PM Tube 300
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    IXYS Corporation IXTQ69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
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    Mouser Electronics IXTQ69N30P 280
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    Future Electronics IXTQ69N30P Tube 300
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    TME IXTQ69N30P 1
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    IXYS Corporation IXTQ69N30P (POLAR)

    Mosfet, N-Ch, 300V, 69A, To-3P Rohs Compliant: Yes |Ixys Semiconductor IXTQ69N30P
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    Newark IXTQ69N30P (POLAR) Bulk 279 1
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    Littelfuse Inc IXTQ69N30PM

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tube |Littelfuse IXTQ69N30PM
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    Newark IXTQ69N30PM Bulk 300
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    IXTQ69N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ69N30PM

    Abstract: IXTQ69N30 ixtq69n30p
    Contextual Info: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXTQ69N30PM 100ms 69N30P 0-16-09-A IXTQ69N30PM IXTQ69N30 ixtq69n30p PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 100ms 69N30P 0-16-09-A PDF

    s69a

    Abstract: IXTQ69N30P IXTT69N30P TO-3P
    Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 063in) 100ms 69N30P 0-16-09-A s69a IXTQ69N30P IXTT69N30P TO-3P PDF

    IXTQ69N30

    Abstract: IXTQ69N30P IXTT69N30P 7V60
    Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60 PDF

    Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF

    Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF

    Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		IXTQ69N30PM 100ms 69N30P 0-16-09-A PDF

    IXTQ69N30P

    Abstract: IXTT69N30P
    Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300


    Original     		IXTT69N30P IXTQ69N30P O-268 063in) 100ms IXTQ69N30P IXTT69N30P 69N30P 0-16-09-A PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF