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    IXTP3N100P Search Results

    IXTP3N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP3N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-220 Original PDF 4
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    IXTP3N100P Price and Stock

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    IXYS Corporation IXTP3N100P

    MOSFET N-CH 1000V 3A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP3N100P Tube 1
    • 1 $5.51
    • 10 $5.51
    • 100 $2.85
    • 1000 $2.58
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    Mouser Electronics IXTP3N100P 36
    • 1 $5.40
    • 10 $3.78
    • 100 $2.91
    • 1000 $2.68
    • 10000 $2.63
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    TTI IXTP3N100P Tube 300
    • 1 -
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    • 1000 $2.17
    • 10000 $2.13
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    Chip 1 Exchange IXTP3N100P 3,253
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    New Advantage Corporation IXTP3N100P 2,003 1
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    • 100 $6.68
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    • 10000 $6.16
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    Vyrian IXTP3N100P 278
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    Littelfuse Inc IXTP3N100P

    Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP3N100P
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    Newark IXTP3N100P Bulk 300
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    • 100 $3.00
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    IXTP3N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP3N100P

    Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
    Contextual Info: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100 PDF

    IXTH3N100P

    Abstract: IXTA3N100P
    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P PDF

    T3N100

    Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
    Contextual Info: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 PDF