IXTH3N100P Search Results

IXTH3N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH3N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-247	Original	PDF		4

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Littelfuse Inc IXTH3N100P Disc Mosfet N-Ch Std-Polar To-247Ad/ Tub; \|Littelfuse IXTH3N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTH3N100P	Bulk			300	1 - 10 - 100 - 1000 $3.92 10000 $3.67	Buy Now
	IXTH3N100P	Bulk			1	1 $6.40 10 $6.40 100 $6.40 1000 $6.40 10000 $6.40	Buy Now
RS	IXTH3N100P	Bulk		8 Weeks	30	1 - 10 - 100 $5.61 1000 $5.61 10000 $5.61	Get Quote
Onlinecomponents.com	IXTH3N100P					1 - 10 - 100 $4.71 1000 $3.23 10000 $3.23	Buy Now
IXYS Corporation IXTH3N100P MOSFETs 3 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTH3N100P	Tube			300	1 - 10 - 100 - 1000 $4.08 10000 $4.08	Buy Now
TME	IXTH3N100P				1	1 $6.67 10 $5.28 100 $3.86 1000 $3.75 10000 $3.75	Get Quote

IXTH3N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP3N100P Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100 Contextual Info: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +43n100p 3-08-a t3n100 3n100	PDF
IXTH3N100P Abstract: IXTA3N100P Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +3o-220 3n100p 3-08-a	PDF
T3N100 Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 Contextual Info: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +33n100p t3n100 siemens diode e 1220	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	irfp354 o-247 irfp360lc 2n3049die +132c3049 o-204aa/to-3 ixtm20n55a ixfh15n100 2n3051 ixfx15n100 ixfh40n30 ixfm6n90 irfp450r ixth24n50l ixth26n50 ixfh20n50 ixfh9n80	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF