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    IXTA3N100P Search Results

    IXTA3N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA3N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-263 Original PDF 4
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    IXTA3N100P Price and Stock

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    IXYS Corporation IXTA3N100P

    MOSFET N-CH 1000V 3A TO263
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    DigiKey IXTA3N100P Tube 300
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    Mouser Electronics IXTA3N100P
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    Future Electronics IXTA3N100P Tube 300
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    TME IXTA3N100P 1
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    IXYS Corporation IXTA3N100P-TRL

    MOSFET N-CH 1000V 3A TO263
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    DigiKey IXTA3N100P-TRL Reel 800
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    Littelfuse Inc IXTA3N100P

    Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA3N100P
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    Newark IXTA3N100P Bulk 300
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    Littelfuse Inc IXTA3N100P-TRL

    Ixta3N100P Trl/ Tr |Littelfuse IXTA3N100P-TRL
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    Newark IXTA3N100P-TRL Reel 800
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    IXTA3N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP3N100P

    Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
    Contextual Info: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100 PDF

    IXTH3N100P

    Abstract: IXTA3N100P
    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P PDF

    T3N100

    Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
    Contextual Info: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 PDF