Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTA3N100P Search Results

    IXTA3N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA3N100P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-263 Original PDF 4
    SF Impression Pixel

    IXTA3N100P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTA3N100P

    MOSFETs 3 Amps 1000V 4.8 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTA3N100P
    • 1 $4.94
    • 10 $3.69
    • 100 $2.72
    • 1000 $2.60
    • 10000 $2.60
    Get Quote
    Future Electronics IXTA3N100P Tube 300
    • 1 -
    • 10 -
    • 100 $2.47
    • 1000 $2.41
    • 10000 $2.35
    Buy Now
    TTI IXTA3N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.35
    • 10000 $2.35
    Buy Now

    IXYS Corporation IXTA3N100P-TRL

    MOSFETs IXTA3N100P TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTA3N100P-TRL
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.41
    • 10000 $2.41
    Get Quote

    IXTA3N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP3N100P

    Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100
    Contextual Info: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100 PDF

    IXTH3N100P

    Abstract: IXTA3N100P
    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P PDF

    T3N100

    Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
    Contextual Info: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 PDF