IXTM6N90 Search Results

IXTM6N90 Datasheets (8)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTM6N90		IXYS	900V HiPerFET power MOSFET	Original	PDF	106.23KB	4
IXTM6N90		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM6N90		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM6N90		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	77.08KB	1
IXTM6N90A		IXYS	900V HiPerFET power MOSFET	Original	PDF	106.23KB	4
IXTM6N90A		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM6N90A		IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTM6N90A		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	77.08KB	1

IXTM6N90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	o-204 o-264 isoplus247 o-220 +16o-252 o-247 o-268 isoplus220 o-263 ot-227b irfp250 irfp460 ixta3n120 36p10 irfp450 bridge n503 irfp460 complementary ixth30n25 ixth48n15 ixth12n100q 16p20	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	ixtm3n100a o-204aa/to-3 ixtm3n70a ixtm3n70 +12mj13081 mj13091 mj1005 md5000a 2n3052 mj12010 ixtp2n100a md7000 mj10011 mj11017 ixtp4n90a mj12007	PDF
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	00v/12a irf250 ixth13p20 ixtp2n95 +7ixtp2n100a ixtp2n95a ixtp4n100 ixtp4n100a ixtp4n90 ixtp4n90a ixtp4n95	PDF
6N90 Abstract: 6N90A Contextual Info: IPIXYS Standard Power MOSFET IXTH/IXTM 6N90 IXTH/IXTM 6N90A VDSS ^D25 DS on 900 V 900 V 6A 6A 1.8 Q 1.4 Í2 D N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V ¥ dss T j =25°C to150°C 900 V VDQR Tj = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 900	OCR Scan	6n90a to150 o-247 o-204 +3ixtm6n90 ixtmgn90a 6n90	PDF
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	ixth13p20 2n7100 ixtp2p50 mosfet irf460 +6irf460 to-247 ixtm10p50 ixtm11p50 ixtp4n100a 2n7103 irf460	PDF
IXTM6N90A Contextual Info: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	ixtm5n100a ixtm5n100 ixtm4n100a ixtm4n100 +7ixtm2n100a ixtm2n100 ixtm5n95a ixtm5n95 ixtm4n95a ixtm4n95 ixtm6n90a	PDF