IXTM4N50 Search Results

IXTM4N50 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTM4N50		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N50		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N50		Unknown	FET Data Book		Scan	PDF
IXTM4N50		Sharp	500 V, 4 A, sourse-drain diode		Scan	PDF
IXTM4N50A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N50A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N50A		Unknown	FET Data Book		Scan	PDF

IXTM4N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	PDF	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
IXTM4N45 Abstract: P-CHANNEL 45A TO-247 POWER MOSFET IXTM4N50 Mosfet K 135 To3 Text: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IXTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 □ IX Y S 4 AMPS, 450-500 V, 1.5Q/2.0S2 MAXIMUM RATINGS Parameter IXTP4N45 IXTM4N45 Sym. IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1 V 0ss 450 500 vrt„ Drain-Gate Voltage (Re s=1.0 MQ) (1)	OCR Scan	PDF	1XTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 IXTP4N45 IXTM4N45 IXTP4N50 ELEC420 O-204 IXTM4N45 P-CHANNEL 45A TO-247 POWER MOSFET Mosfet K 135 To3
4N50 Abstract: POWER MOSFET 4n45 IXTP4N45 4N45 IXTM4N45 IXTM4N50 IXTP4N50 Text: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IX T P 4 N 4 5 , IX T P 4 N 5 0 , IX T M 4 N 4 5 , IX T M 4 N 5 0 4 A M P S , 450-500 V, 1.5Q/2.0S2 □ IX Y S MAXIMUM RATINGS Parameter Sym. IXTP4N45 IXTM4N45 IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1	OCR Scan	PDF	1XTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 IXTP4N45 IXTM4N45 IXTP4N50 O-220 00A/ns 4N50 POWER MOSFET 4n45 4N45 IXTM4N45
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF	00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF
IXTM6N90A Abstract: No abstract text available Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	PDF	IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A
1800 IXYS Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204 Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (typ) (typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %	OCR Scan	PDF	M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204