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    IXTH30N50 Search Results

    IXTH30N50 Datasheets (5)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH30N50
    IXYS 500V MegaMOS FET Original PDF 38.04KB 2
    IXTH30N50L
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 30A TO-247 Original PDF 5
    IXTH30N50L2
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30A 500V TO-247 Original PDF 5
    IXTH30N50P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 30A TO-247 Original PDF 5
    IXTH30N50S
    IXYS MegaMOS FET Original PDF 38.04KB 2
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    IXTH30N50 Price and Stock

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    IXYS Corporation IXTH30N50P

    Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
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    TME IXTH30N50P 1
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    Mouser Electronics IXTH30N50P 282
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    TTI IXTH30N50P Tube 300 30
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    IXYS Corporation IXTH30N50L2

    Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
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    TME IXTH30N50L2 1
    • 1 $49.98
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    Mouser Electronics IXTH30N50L2
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    Newark IXTH30N50L2 Bulk 25 1
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    TTI IXTH30N50L2 Tube 300
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    IXYS Corporation IXTH30N50

    MOSFETs 30 Amps 500V 0.17 Rds
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    IXYS Corporation IXTH30N50L

    MOSFETs 30 Amps 500V
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    Littelfuse Inc IXTH30N50P

    Mosfet Discrete To-247/ Tube; |Littelfuse IXTH30N50P
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    Newark () IXTH30N50P Bulk 300
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    IXTH30N50P Bulk 1
    • 1 $9.89
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    RS IXTH30N50P Bulk 8 Weeks 30
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    Onlinecomponents.com IXTH30N50P
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    IXTH30N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH30N50L2

    Contextual Info: IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 LinearL2TM Power MOSFET w/ Extended FBSOA D O VDSS ID25 = 500V = 30A  215m  RDS on D TO-268 (IXTT) N-Channel Enhancement Mode RGi G G ww O S O S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS


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    ixth30n50l2ixtq30n50l2ixtt30n50l2o-268+2100ms30n50l2 PDF

    IXTH30N50

    Abstract: IXTH30N50L2
    Contextual Info: Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 D N-Channel Enhancement Mode O = 500V = 30A ≤ 200mΩ Ω RDS on D D TO-247 (IXTH) RGi G O ww O (TAB) S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


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    ixth30n50l2ixtq30n50l2ixtt30n50l2o-247+3100ms30n50l2ixth30n50 PDF

    IXTH30N50

    Abstract: IXTH30N50L2
    Contextual Info: Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 D N-Channel Enhancement Mode O = 500V = 30A ≤ 200mΩ Ω RDS on D D TO-247 (IXTH) RGi G O ww O (TAB) S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


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    ixth30n50l2ixtq30n50l2ixtt30n50l2o-247+4o-268063in100msixth30n50 PDF

    IXTH30N50L2

    Abstract: IXTQ30N50L2 IXTQ30N50L
    Contextual Info: Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 D N-Channel Enhancement Mode O = 500V = 30A ≤ 200mΩ Ω RDS on D D TO-247 (IXTH) RGi G O ww O (TAB) S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original
    ixth30n50l2ixtq30n50l2ixtt30n50l2o-247+3o-268100msixtq30n50l PDF

    IXTH30N50

    Contextual Info: Preliminary Technical Information Power MOSFET with Extended FBSOA IXTH30N50L IXTQ30N50L IXTT30N50L N-Channel Enhancement Mode VDSS ID25 D O = 500V = 30A ≤ 0.20Ω Ω RDS on D D TO-247 (IXTH) RGi G O ww O S (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C


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    ixth30n50lixtq30n50lixtt30n50lo-247+3100ms30n50lixth30n50 PDF

    IXTH30N50

    Contextual Info: MegaMOS FET IXTH30N50 VDSS D25 RDS on = 500 V = 30 A = 0.17 Q N-Channel Enhancement Mode Preliminary data Maximum Ratings Symbol Test Conditions v DSS T, = 25°C to 150°C 500 V vDGR ^ = 25°C to 150°C; RGS = 1 M£2 500 V Vcs Continuous ±20 V vGSM Transient


    OCR Scan
    ixth30n50o-247 PDF

    IXTQ30N50L

    Abstract: IXTH30N50
    Contextual Info: Preliminary Technical Information Power MOSFET with Extended FBSOA IXTH30N50L IXTQ30N50L IXTT30N50L N-Channel Enhancement Mode VDSS ID25 D O = 500V = 30A ≤ 0.20Ω Ω RDS on D D TO-247 (IXTH) RGi G O ww O S (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C


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    ixth30n50lixtq30n50lixtt30n50lo-247+3o-268100msixth30n50 PDF

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


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    o-204o-264isoplus247o-220+16o-252o-247o-268isoplus220o-263ot-227birfp250 irfp460ixta3n12036p10irfp450 bridgen503irfp460 complementaryixth30n25ixth48n15ixth12n100q16p20 PDF

    d5023

    Abstract: C5027 R d3000 mosfet C5027 r transistor mosfet c5027 equivalent transistor D5023 C6017 Transformer ei33 equivalent of transistor c5027 NEC2501
    Contextual Info: Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM075 Rev 1 11/2005 freescale.com Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual


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    56f801356800e16-bitdrm075+10d5023c5027 rd3000 mosfetc5027 r transistor mosfetc5027equivalent transistor d5023c6017transformer ei33equivalent of transistor c5027nec2501 PDF

    equivalent of transistor c5027

    Abstract: equivalent transistor D5023 D5023 C5027 d3000 mosfet C5027 r r2003 TRANSISTOR IN4007 diode documentation. free equivalent of transistor c6017 d3002 transistor
    Contextual Info: PMSM and BLDC Sensorless Motor Control using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM077 Rev 0 11/2005 freescale.com PMSM and BLDC Demonstration using the 56F8013 Device Designer Reference Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


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    56f801356800e16-bitdrm077+10equivalent of transistor c5027equivalent transistor d5023d5023c5027d3000 mosfetc5027 rr2003 transistorin4007 diode documentation. freeequivalent of transistor c6017d3002 transistor PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    IXTN60N50L2

    Abstract: 13.575 PLUS247 IXTH30N50L2 IXTK60N50L2 400V voltage regulator "Power MOSFETs" IXTN IXTP15N50L2 IXTQ30N50L2
    Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F Linear L2TM Power MOSFETs Next generation of extended safe operating area rugged power mosfets JUly 2009 OVERVIEW IXYS Linear L2TM MOSFETs are distinguished as a new class of rugged Power MOSFETs


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    ixtn60n50l213.575plus247ixth30n50l2+6ixtk60n50l2400v voltage regulatorpower mosfetsixtnixtp15n50l2ixtq30n50l2 PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


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    irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80 PDF

    30n45

    Abstract: 30n50 IXTH30N50
    Contextual Info: mm □ ix Y S Prelim inary Data Sheet M egaM O S F E T IXTH 30N45 IXTH 30N50 N-Channel Enhancement Mode Vv DSS ^D25 450 V 500 V 30 A 30 A □ DS on 0A6Q. 0.17 a TO-247 AD Symbol Test Conditions V Tj = 2 5°C to 15 0 °C v DQR ^ Maximum Ratings = 25°C to 150°C; Ras = 1 M il


    OCR Scan
    30n4530n50cto150o-247+34bflb22b000402eixth30n50 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


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    d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250 PDF

    30n45

    Abstract: megamos 30N50 IXTH30N50 f g megamos IXTH30N45 IXTH30N50S
    Contextual Info: Preliminary Data Sheet TM MegaMOS FET IXTH 30N45 IXTH 30N50 N-Channel Enhancement Mode VDSS ID25 RDS on 450 V 500 V 30 A 30 A 0.16 Ω 0.17 Ω TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    30n4530n50o-247megamos+4ixth30n50f g megamosixth30n45ixth30n50s PDF