IXDR30N60BD1 Search Results

35N60

Abstract: 35N60BD1
Contextual Info: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ

35N60

Contextual Info: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600

Contextual Info: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ

35N60

Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
Contextual Info: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220