IXBK75N170 Search Results

IXBK75N170 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXBK75N170		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W TO264	Original	PDF		5
IXBK75N170A		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W TO264	Original	PDF		6

IXBK75N170 Price and Stock

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IXYS Corporation IXBK75N170 IGBT 1700V 200A TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBK75N170	Tube			1	1 $63.20 10 $63.20 100 $47.50 1000 $47.50 10000 $47.50	Buy Now
Mouser Electronics	IXBK75N170		450			1 $61.61 10 $47.51 100 $47.50 1000 $47.50 10000 $47.50	Buy Now
TTI	IXBK75N170	Tube			300	1 - 10 - 100 - 1000 $46.35 10000 $46.35	Buy Now
TME	IXBK75N170				1	1 $60.28 10 $60.28 100 $60.28 1000 $60.28 10000 $60.28	Get Quote
New Advantage Corporation	IXBK75N170		6		1	1 - 10 $127.52 100 $127.52 1000 $127.52 10000 $127.52	Buy Now
IXYS Corporation IXBK75N170A IGBT 1700V 110A TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBK75N170A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXBK75N170A					1 - 10 $43.17 100 $38.13 1000 $38.13 10000 $38.13	Get Quote
Littelfuse Inc IXBK75N170 Transistor, Igbt, 1.7Kv, 200A, To-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04Kw; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Littelfuse IXBK75N170
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBK75N170	Bulk	155		1	1 $61.94 10 $51.68 100 $46.55 1000 $46.55 10000 $46.55	Buy Now

IXBK75N170 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170	PDF
IXBK75N170 Abstract: IXBX75N170 IXBX 75N170 PLUS247 Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247	PDF
ixbk75n170 Abstract: PLUS247 IXBX75N170 IXBX 75N170 Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170	PDF
Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A	PDF
IXBK75N170A Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z	PDF