ITT TAA CAPACITORS Search Results

GM71C4400BJ

Abstract: GM71C4400 gm71c4400b
Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition

itt taa capacitors

Contextual Info: • ■ M » ■ i n V IDT7MP4120 1 M x 32 C M 0S STATIC RAM MODULE T FEATURES DESCRIPTION • High-density 4MB Static RAM module • Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) • Fast access time: 15ns (max.)

MC-424000A8FA-60

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the

Contextual Info: 256K x 32 CMOS STATIC RAM MODULE IDT7MP4045 IDT7MP4145 Integrated D evice Technology, Inc. DESCRIPTION: • High density 1 m egabyte static RAM module IDT7M P4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)

Contextual Info: LIE D • bEMTf l SS 0 0 2 D5 MS 3 m M MITSUBISHI H 2 M ■ M IT I 3 2 E J MITSUBISHI LSIs , S E J - 6 , - 7 , - 8 , - 1 PI Ef lORY/ASI C FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 w ord x 3 2 b it dynamic

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

D-85540

Abstract: HM5116400ATS
Contextual Info: HB56T432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56T432D is a 4M x 32 dynamic R A M Small Outline D IM M S .O .D IM M , mounted 8 pieces of 16-Mbit D R A M (HM5116400ATS) sealed in TSOP package. An outline of the HB56T432D is 72-pin Zig Zag

Contextual Info: HB56TW432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW432D is a 4M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM51W16400ATS) sealed in TSOP package. An outline of the HB56TW432D is 72-pin Zig Zag

Contextual Info: 1 Megabit CMOS SRAM PENSE-PAC MICROSYSTEMS DPS3232V D E SC R IP TIO N : The D PS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic L C C packages surface mounted on a co-fired ceramic substratewith matching thermal coefficients. The LCCs

SH 6770

Abstract: MC-428000A36 1J250
Contextual Info: N E C ELECTRONICS INC b lE ]> • b4S7SES 0G34434 NEC Electronics Inc. Description Pin Configuration The MC-428000A36 is a fast-page dynamic RAM mod­ ule organized as 8,388,608 words by 36 bits and de­ signed to operate from a single +5-volt power supply.

SIMM 30-pin

Abstract: TM497GU8 30-pin simm memory TMS417400 TMS417400DJ
Contextual Info: TM497GU8 4194394-WORD BY 8-BIT DYNAMIC RAM MODULE S M M S498-A PR IL 1994 Organization . . . 4194304 x 8 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets VCC CAS DQ1

Intronic

Contextual Info: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: m i X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

Contextual Info: Prelim inary HB56D236BW/SBW-6B/7B/8B 2,097,152-Word x 36-Bit High D ensity D ynam ic RAM M odule Rev.O Dec.20. 1993 HITACHI The IIB 5 6 D 2 3 6 is a 2M X 36 d yn am ic R A M module, mounted 16 pieces of 4 M b it D R A M H M 5 1 4 4 0 0 BS sealed in S O J package and 4

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

514400B

Contextual Info: Prelim inary H B 5 6 D 1 3 6B W /S B W -6B /7B /8B 1 ,0 4 8 ,5 7 6 -W o r d x 3 6 -B it H ig h D e n s ity D y n a m ic R A M M o d u le Rev.O Dec.20 .19 93 HITACHI T h e H B 56D 136 is a 1M X 36 d y n a m ic RAM m odule, m ounted 8 pieces of 4M bit DRAM H M 514400B S sealed in SO J package and 2

Contextual Info: >pec. MITSUBISHI LSIs Specifications subject to • ■ ■ ■ _» m mi m ■ m m m m a MH16V7245AWJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V7245AWJ is 16777216-word x 72-bit dynamic

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized for ECC applications

ETR1 TIMERS

Abstract: OTI-037 taa 765a 765A LC43 8253 programme able interface ic 4060 pin diagram OTI-032 mark 1AM oti037
Contextual Info: OAK TECHNOLOGY INC. OTI-033 IBM PS/2 MODEL 30-COMPATIBLE FLOPPY DISK CONTROLLER AND DATA SEPARATOR FEATURES • Provides a 765A-com patible floppy disk controller • Contains a precision analog data separator • Integrates an internal phase com para­

Hall Siemens

Abstract: HYB51471B MARKING AOH
Contextual Info: H Ÿ B b141 fiu J /H Ü L - 5 0 fM i ü /i - /U r 2 5 6 k x i 6 - s i t D y n a m ic R A M i M r ñ n n y i a • M r u n i v i M M Ö K X 1Ö B T I t w i u t t i â k i l u i M m n U Y N A iy ïlU u a t c i n |V !t!V !U h |t5 Íy H u n Vp wr w< ■ h■9r i■n

Contextual Info: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Contextual Info: XRD9815 3-Channel 12-Bit Linear CCD & CIS Sensor Signal Processors September 1999-3 FEATURES • Internal Voltage Reference Triple-Channel, 4 Mega Pixels Per Second CCD Color Scan Mode • 5V Operation and 3V I/O Compatibility • Low Power CMOS: 500mW @ 5V