ITCHING Search Results

10GWJ2CZ

Abstract: 10GWJ2CZ47C 10MWJ2CZ47
Contextual Info: SCHOTTKY BARRIER TYPE RECTIFIER STACK 10GWJ2CZ47C 10 J,M WJ2CZ47 Unit in mm SW ITCHING TY P E POW ER SU PPLY APPLICATIO N . CO M VERTER & CHOPPER APPLICATIO N . - 10.3 MAX • • • 03.2 ±0-2 Repetitive Peak Reverse Voltage : V r r m = 40, 60, 90V

GT50J102

Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.

2N5885

Abstract: 2N 5883 2n 5886
Contextual Info: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.

P channel 50A IGBT

Contextual Info: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)

Contextual Info: TOSHIBA 2SK3068 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt-M O S V 2SK3068 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE TO -220FL APPLICATIONS • • • • INDUSTRIAL APPLICATIONS

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

MG150Q2YS40

Abstract: CV200
Contextual Info: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)

6052S

Abstract: 1N661
Contextual Info: TYPES 1N659, 1N660. 1N661 SILICON SW ITCHING DIODES B U LLETIN NO. DL-S 739782, M AR C H 19 6 7 - R E V IS E D M AR C H 1973 M EDIUM-SPEED ITCHING DIO DES • Rugged Double-Plug Construction m echanical d a ta D o u b le -p lu g c o n s tru c tio n a ffo rd s inte gral p o s itiv e c o n ta c t b y m eans o f a th e rm a l c o m p re s sio n b o n d . M o istu re -fre e

Contextual Info: TOSHIBA MG90V2YS40 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG90V2YS40 HIGH P O W ER SW ITCHING APPLICATIONS U n it in mm M O TO R CONTROL APPLICATIONS 4-FAST-ON-TAB #110 The Electrodes; are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: RN4990 RN4990 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIO NS • • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process B B Jul Q2 Rl o 6 -e ' 2

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.

Contextual Info: TY P ES TID 777, TID778 S ILIC O N SW ITCHING D IO D ES B U L L E T IN N O . D L -S 7 3 1 1 7 4 5 , J A N U A R Y 1 9 7 3 VERY-HIGH-SPEED ITCHING DIODES • Pico-Second itching Times • Small-Size, Double-Plug Construction • Very Low Junction Capacitance

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

Contextual Info: TO SHIBA GT15J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 1 5 .9 M A X M O TO R CONTROL APPLICATIONS • • • • ;S3.2 ± 0 .2 m High Input Impedance High Speed : tf=0.35/*s Max.

SS302

Contextual Info: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)

Contextual Info: RN4612 RN4612 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D D RIVER CIRCUIT APPLICATIONS. + 0.2 2.8 - 0 .3 + 0.2 1 6 - 0 .1 • Including Two D evices in SM 6 (Süper M ini Type w ith 6 leads) • W ith B u ilt-in B ias Resistors •

cmh2

Contextual Info: TLP114A GaAßAs IRED & PHOTO-IC T I P1 1 4 A DIGITAL LOGIC ISOLATION. U n it in mm LINE RECEIVER. P O W E R SU PPLY CONTROL FEED BAC K CONTROL. SW ITCHING P O W E R SUPPLY. TRANSISTOR INVERTOR. The T O S H IB A M IN I F L A T C O U P L E R T L P 1 1 4 A is a sm all outline

Contextual Info: TOSHIBA R N 2 1 0 7 F -R N 2 1 0 9 F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

Contextual Info: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4609 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors

2SC5172

Contextual Info: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A