IT109 Search Results

Contextual Info: Ordering number : ENA0523B 2SK4094 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 5mΩ, TO-220-3L Features • • • ON-resistance RDS on 1=3.8mΩ (typ.) Input capacitance Ciss=12500pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

2SK3977

Contextual Info: 2SK3977 Ordering number : ENA0391 SANYO Semiconductors DATA SHEET 2SK3977 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C

FW169

Contextual Info: FW169 Ordering number : ENA0387 P-Channel Silicon MOSFET FW169 General-Purpose Switching Device Applications Features • • 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

Contextual Info: 2SK4063LS Ordering number : ENA0397A N-Channel Silicon MOSFET 2SK4063LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

diode sy 710

Abstract: VEC2813 N1407
Contextual Info: VEC2813 Ordering number : ENA0384B SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

2SK4064LS

Abstract: A0312-1 IT10693
Contextual Info: 2SK4064LS Ordering number : ENA0312D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4064LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

VEC2813

Contextual Info: VEC2813 注文コード No. N A 0 3 8 4 B 三洋半導体データシート 半導体データシート No.NA0384A をさしかえてください。 VEC2813 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード

SBT100-16LS

Abstract: sbt100 A0393-1
Contextual Info: SBT100-16LS 注文コード No. N A 0 3 9 3 三洋半導体データシート N SBT100-16LS ショットキバリアダイオード ツインタイプ・カソードコモン 160V, 10A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

CPH3246

Abstract: VR10
Contextual Info: CPH3246 注文コード No. N A 0 3 9 9 三洋半導体データシート N CPH3246 NPN エピタキシァルプレーナ型シリコントランジスタ 大電流スイッチング用 用途 ・DC / DC コンバータ , リレードライブ , ランプドライブ , モータドライブ , インバータ。

2SK3977

Contextual Info: 2SK3977 注文コード No. N A 0 3 9 1 三洋半導体データシート N 2SK3977 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4.5V 駆動。

2SK4062LS

Contextual Info: 2SK4062LS Ordering number : ENA0396B N-Channel Silicon MOSFET 2SK4062LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

K4066

Abstract: 2SK4066 K406
Contextual Info: 2SK4066 Ordering number : ENA0225A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4066 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications

Contextual Info: 2SK4062LS Ordering number : ENA0396A N-Channel Silicon MOSFET 2SK4062LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

diode sy 710

Abstract: VEC2814
Contextual Info: VEC2814 Ordering number : ENA0390B SANYO Semiconductors DATA SHEET VEC2814 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

82360SL

Abstract: CD 2399 GP
Contextual Info: 0 M [F § Ä Ä ? 0 M in te i Intel386 SL MICROPROCESSOR SuperSet Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU — Runs MS-DOS*, W IN D O W S’ , O S /2 *

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

LT1667

Abstract: LT1665 CA10 A058 dk 300 a008 82360SL LCD CMC 116 L01 2164 intel INTEL 82360 CD 2399 GP A049 crystal
Contextual Info: 5bE ]> • 4ÔSbl7S D i n o S M E34 « I T L 1 up/prpHLS irrte* Intel386 CORP SL MICROPROCESSOR SuperSet INTEL 'T~-(4c\ 1 7 -3 ^ Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU

IT10981

Contextual Info: 2SK4063LS Ordering number : ENA0397C N-Channel Silicon MOSFET 2SK4063LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

Contextual Info: CPH6622 Ordering number : ENA0398 SANYO Semiconductors DATA SHEET CPH6622 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch.

K4066

Contextual Info: 2SK4066 Ordering number : ENA0225A N-Channel Silicon MOSFET 2SK4066 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SK4064LS Ordering number : ENA0312B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4064LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

82306

Abstract: sbt100 SBT100-16LS T8060 sbt10016
Contextual Info: SBT100-16LS Ordering number : ENA0393 SANYO Semiconductors DATA SHEET SBT100-16LS Schottky Barrier Diode Twin Type • Cathode Common 160V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features